Orderable parts
| Type number | Orderable part number | Ordering code (12NC) | Package | Buy from distributors |
|---|---|---|---|---|
| GANE011-080CBA | GANE011-080CBAZ | 934670834341 | WLCSP9_SOT8134 | Order product |
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Click here for more informationAEC-Q101 qualified 80 V, 11 mOhm Gallium Nitride (GaN) FET in a 1.5 mm x 1.5 mm Wafer Level Chip-Scale Package (WLCSP)
The GANE011-080CBA is a a general purpose 80 V, 11 mΩ Gallium Nitride (GaN) FET in a Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance and very low on-state resistance. It passes AEC-Q101 qualification.
Enhancement mode - normally-off power switch
Ultra high frequency switching capability
No body diode
Low gate charge, low output charge
Tested to AEC-Q101 standard
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Wafer Level Chip-Scale Package (WLCSP) 1.5 mm x 1.5 mm
LiDAR Application
Class-D Audio Amplifier
High Power Density and High switching frequency DC-to-DC Converters
AC-to-DC converters (secondary stage)
High Intensity Headlamps
Motor drives
| Type number | Package version | Package name | Product status | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GANE011‑080CBA | WLCSP9_SOT8134 | WLCSP9 | Production | 1 | 80 | 11 | 150 | 0.4 | 16.2 | 1.1 | 268 | 127 | 2025-11-24 |
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| GANE011‑080CBA | GANE011‑080CBAZ (934670834341) |
Active | 011 CCBA |
WLCSP9 (WLCSP9_SOT8134) |
WLCSP9_SOT8134 | WLCSP9_SOT8134_341 |
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| GANE011‑080CBA | GANE011‑080CBAZ | GANE011‑080CBA |
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| File name | Title | Type | Date |
|---|---|---|---|
| GANE011-080CBA | AEC-Q101 qualified 80 V, 11 mOhm Gallium Nitride (GaN) FET in a 1.5 mm x 1.5 mm Wafer Level Chip-Scale Package (WLCSP) | Data sheet | 2025-11-20 |
| WLCSP9_SOT8134 | WLCSP9: wafer level chip-scale package; 9 bumps; 1.500 × 1.500 × 0.663 mm body | Package information | 2025-11-25 |
| WLCSP9_SOT8134_341 | WLCSP9; Reel dry pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2025-09-03 |
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The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
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| Type number | Orderable part number | Ordering code (12NC) | Status | Packing | Packing Quantity | Buy online |
|---|---|---|---|---|---|---|
| GANE011‑080CBA | GANE011‑080CBAZ | 934670834341 | Active | WLCSP9_SOT8134_341 | 2,500 |
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As a Nexperia customer you can order samples via our sales organization.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.