Bipolar transistors

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ESD protection, TVS, filtering and signal conditioning

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Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

NGW75T65H3DF

NGW75T65H3DF Production

IGBT with trench construction, fast recovery diode

The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠-⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard⁠-⁠switching 650 V, 75 A IGBT is optimized for high⁠-⁠voltage, high⁠-⁠frequency industrial power inverter applications.

  • Product details
  • Documentation
  • Support
  • Ordering
  • Interactive datasheet

Product details

Features

  • Device current is rated at 75 A

  • Low conduction and switching losses

  • Stable and tight parameters for easy parallel operation

  • Maximum junction temperature 175 °C

  • Fully rated and fast reverse recovery diode

  • HV-H3TRB qualified

Applications

  • Power inverters such as

    • Uninterruptible Power Supply (UPS) inverter

    • EV charging converter

  • Power Factor Correction (PFC)

  • Induction heating

  • Welding

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More information

Quality and reliability disclaimer

Support

Please contact us if you have any questions. If you are in need of design support, please fill in the technical support form, we will get back to you shortly.

Please visit our engineer exchange forum or contact us for further support.

Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

Sample

As a Nexperia customer you can order samples via our sales organization.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.

Interactive datasheet

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet