×

BSS138BK

60 V, 360 mA N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
BSS138BK BSS138BKVL 934065729235 SOT23 Order product
BSS138BK BSS138BK,215 934065729215 SOT23 Order product

Features and benefits

  • Logic-level compatible

  • Very fast switching

  • Trench MOSFET technology

  • ESD protection up to 1.5 kV

  • AEC-Q101 qualified

Applications

  • Relay driver

  • High-speed line driver

  • Low-side load switch

  • Switching circuits

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)Ptot [max] (W)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
BSS138BKSOT23SOT23ProductionN1601600220065001500.360.20.60.351.1Y4272011-08-09

PCB Symbol, Footprint and 3D Model

Model NameDescription

Package

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
BSS138BKBSS138BKVL
( 9340 657 29235 )
Active%SB

(SOT23)
SOT23REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT23_235
BSS138BK,215
( 9340 657 29215 )
Active%SBSOT23_215

Environmental information

Type numberOrderable part numberChemical contentRoHSRHF-indicator
BSS138BKBSS138BKVLBSS138BK
BSS138BKBSS138BK,215BSS138BK
Quality and reliability disclaimer

Documentation (15)

File nameTitleTypeDate
BSS138BK60 V, 360 mA N-channel Trench MOSFETData sheet2017-06-08
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication note2021-01-04
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
BSS138BK_30_01_2012BSS138BK_30_01_2012 Spice parameterSPICE model2012-04-13
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
SOT23_235Reel pack for SMD, 11"; Q3/T4 product orientationPacking information2020-06-01
SOT23_215Reel pack for SMD, 7"; Q3/T4 product orientationPacking information2020-04-29
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06
WAVE_BG-BD-1Wave soldering profileWave soldering2021-09-08

Support

If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.

Models

File nameTitleTypeDate
BSS138BK_30_01_2012BSS138BK_30_01_2012 Spice parameterSPICE model2012-04-13

PCB Symbol, Footprint and 3D Model

Model NameDescription

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingPacking quantityBuy online
BSS138BKBSS138BKVL934065729235SOT23_235- Order product
BSS138BKBSS138BK,215934065729215SOT23_215- Order product

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.