Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC power devices

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

SiC power devices

Efficient, robust Silicon Carbide (SiC) power for high-voltage applications

Addressing the growing demand for efficient, high-voltage power devices, Nexperia’s Silicon Carbide (SiC) diodes and MOSFETs help designers achieve higher system efficiency, increased power density and robust switching performance. From 650 V to 1200 V, SiC technology reduces switching losses, supports higher-frequency operation and eases thermal management, making it a strong choice for power supplies, charging systems, inverters and motor drives for automotive, AI and dataserver, green energy and other applications.

Key features and benefits

  • Lower switching losses to improve overall system efficiency
  • Higher switching frequency capability to support smaller magnetics and more compact designs
  • Improved thermal performance to ease cooling requirements and reduce system heat
  • Higher power density to help shrink converter, inverter and charger designs
  • Robust high-voltage operation for demanding industrial, energy and e-mobility applications

Key applications

Version Name Description Mounting method Surface mount Pins Pitch (mm) Footprint area (mm²) PDF

Please contact us if you have any questions. If you are in need of design support, please fill in the technical support form, we will get back to you shortly.

Please visit our engineer exchange forum or contact us for further support.


Cross reference