Addressing the growing demand for efficient, high-voltage power devices, Nexperia’s Silicon Carbide (SiC) diodes and MOSFETs help designers achieve higher system efficiency, increased power density and robust switching performance. From 650 V to 1200 V, SiC technology reduces switching losses, supports higher-frequency operation and eases thermal management, making it a strong choice for power supplies, charging systems, inverters and motor drives for automotive, AI and dataserver, green energy and other applications.
Key features and benefits
- Lower switching losses to improve overall system efficiency
- Higher switching frequency capability to support smaller magnetics and more compact designs
- Improved thermal performance to ease cooling requirements and reduce system heat
- Higher power density to help shrink converter, inverter and charger designs
- Robust high-voltage operation for demanding industrial, energy and e-mobility applications
Key applications
- Automotive: Electrification (xEV powertrain)
- Industrial and power: AI and dataserver
- Industrial and power: Green energy
- Sub-systems: Motor drive
- Sub-systems: Power conversion topologies
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