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Click here for more informationBAS116T
Single low leakage current switching diode
Single low leakage current switching diode, encapsulated in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.
Features and benefits
- High switching speed: trr = 0.8 µs
- Low leakage current: 3 pA
- Repetitive peak reverse voltage: VRRM ≤ 85 V
- AEC-Q101 qualified
- Low capacitance: Cd = 2 pF
- Reverse voltage: VR ≤ 75 V
- Ultra small SMD plastic package
Applications
- Low leakage current applications
- General-purpose switching
- Voltage clamping
- Reverse polarity protection
Parametrics
Type number | Package version | Package name | Size (mm) |
---|---|---|---|
BAS116T | SOT416 | SC-75 | 1.6 x 0.75 x 0.9 |
Package
All type numbers in the table below are discontinued.
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
---|---|---|---|---|---|---|---|
BAS116T | BAS116T,115 (934063959115) |
Obsolete |
SC-75 (SOT416) |
SOT416 | SOT416_115 |
Environmental information
All type numbers in the table below are discontinued.
Quality and reliability disclaimerDocumentation (4)
File name | Title | Type | Date |
---|---|---|---|
BAS116T | Single low leakage current switching diode | Data sheet | 2012-07-10 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT416 | plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body | Package information | 2020-04-21 |
BAS116T | BAS116T SPICE model | SPICE model | 2024-08-12 |
Support
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Models
File name | Title | Type | Date |
---|---|---|---|
BAS116T | BAS116T SPICE model | SPICE model | 2024-08-12 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.