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PSMN4R6-100XS

N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A)

Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

This product has been discontinued, click here for discontinuation information and replacement parts.

Features and benefits

  • High efficiency due to low switching and conduction losses
  • TO220 package
  • Suitable for standard level gate drive

Applications

  • AC-to-DC power supply equipment
  • Motor control
  • Server power supplies
  • Synchronous rectification

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN4R6-100XS SOT186A TO-220F End of life N 1 100 4.6 175 70.4 40 153 63.8 173 3 N 9900 660 2012-06-13

Package

All type numbers in the table below are discontinued. See the table Discontinuation information for more information.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PSMN4R6-100XS PSMN4R6-100XS,127
(934067065127)
Obsolete PSMN4R6 100XS P**XXYY AZ Batch No no package information

Environmental information

All type numbers in the table below are discontinued. See the table Discontinuation information for more information.

Type number Orderable part number Chemical content RoHS RHF-indicator
PSMN4R6-100XS PSMN4R6-100XS,127 PSMN4R6-100XS rohs rhf
Quality and reliability disclaimer

Documentation (11)

File name Title Type Date
PSMN4R6-100XS N-channel 100V 4.6 mOhm standard level MOSFET in TO220F (SOT186A) Data sheet 2012-07-03
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2023-02-03
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
PSMN4R6-100XS PSMN4R6-100XS Spice model SPICE model 2012-06-14
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12

Support

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Models

File name Title Type Date
PSMN4R6-100XS PSMN4R6-100XS Spice model SPICE model 2012-06-14

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.