Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

GANB012-040CBA

GANB012-040CBA Production

40 V, 12 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.2 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP)

The GANB012-040CBA is a 40 V, 12 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off e-mode device offering superior performance.

  • Product details
  • Documentation
  • Support
  • Ordering
  • Interactive datasheet

Product details

Features and benefits

  • Enhancement mode - normally-off power switch

  • Bi-directional device

  • Ultra high switching speed capability

  • Ultra-low on-state resistance

  • RoHS, Pb-free, REACH-compliant

  • High efficiency and high power density

  • Wafer Level Chip-Scale Package (WLCSP) 1.2 mm x 1.7 mm

Applications

  • High-side load switch

  • OVP protection in smart phone USB port

  • DC-to-DC converters

  • Power switch circuits

  • Stand-by power system

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More information

Quality and reliability disclaimer

Support

Please contact us if you have any questions. If you are in need of design support, please fill in the technical support form, we will get back to you shortly.

Please visit our engineer exchange forum or contact us for further support.

Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

Sample

As a Nexperia customer you can order samples via our sales organization.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.

Interactive datasheet

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet