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PHB21N06LT

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
PHB21N06LT PHB21N06LT,118 934054570118 SOT404 Order product

Features and benefits

  • Low conduction losses due to low on-state resistance

  • Suitable for high frequency applications due to fast switching characteristics

  • Suitable for logic level gate drive sources

Applications

  • DC-to-DC convertors

  • Switched-mode power supplies

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PHB21N06LTSOT404D2PAKProductionN1557075175195.456941.5N466952011-01-05

PCB Symbol, Footprint and 3D Model

Model NameDescription

Package

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
PHB21N06LTPHB21N06LT,118
( 9340 545 70118 )
ActivePHB 21N06LTA
D2PAK
(SOT404)
SOT404REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT404_118

Environmental information

Type numberOrderable part numberChemical contentRoHSRHF-indicator
PHB21N06LTPHB21N06LT,118PHB21N06LT
Quality and reliability disclaimer

Documentation (16)

File nameTitleTypeDate
PHB_PHD_PHP21N06LTN-channel TrenchMOS (tm) transistor Logic level FETData sheet1999-07-31
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11160Designing RC SnubbersApplication note2023-02-03
AN11156Using Power MOSFET Zth CurvesApplication note2021-01-04
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication note2021-01-04
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
PHB21N06LTPHB21N06LT SPICE modelSPICE model2012-06-08
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
SOT404_118D2PAK; Reel pack; SMD, 13" Q2/T3 standard product orientation Orderable part number ending ,118 or J Ordering code (12NC) ending 118Packing information2020-04-27
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06
WAVE_BG-BD-1Wave soldering profileWave soldering2021-09-08

Support

If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.

Models

File nameTitleTypeDate
PHB21N06LTPHB21N06LT SPICE modelSPICE model2012-06-08

PCB Symbol, Footprint and 3D Model

Model NameDescription

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingPacking quantityBuy online
PHB21N06LTPHB21N06LT,118934054570118SOT404_118- Order product

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.