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PSMN011-60MS

N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33

Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
PSMN011-60MS PSMN011-60MSX 934067518115 SOT1210 Order product

Features and benefits

  • High efficiency due to low switching and conduction losses

  • Suitable for standard level gate drive sources

  • LFPAK33 package is footprint compatible with other 3.3mm types

  • Qualified to 175 °C

Applications

  • AC-to-DC converters

  • Synchronous rectification

  • DC-DC converters

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PSMN011-60MSSOT1210LFPAK33ProductionN16011.3175615.8239119.23N13681912013-03-11

PCB Symbol, Footprint and 3D Model

Model NameDescription

Package

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
PSMN011-60MSPSMN011-60MSX
( 9340 675 18115 )
ActiveM11S60
LFPAK33
(SOT1210)
SOT1210REFLOW_BG-BD-1
SOT1210_115

Environmental information

Type numberOrderable part numberChemical contentRoHSRHF-indicator
PSMN011-60MSPSMN011-60MSXPSMN011-60MS
Quality and reliability disclaimer

Documentation (15)

File nameTitleTypeDate
PSMN011-60MSN-channel 60 V, 11.3 mΩ standard level MOSFET in LFPAK33Data sheet2018-03-30
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN90003LFPAK MOSFET thermal design guideApplication note2023-08-22
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
Reliability_information_t6_sot1210Reliability information t6 sot1210Quality document2023-04-14
T6_SOT1210_PSMN011-60MS_Nexperia_Quality_documentT6 SOT1210 PSMN011-60MS Nexperia Quality documentQuality document2023-04-14
PSMN011-60MSPSMN011-60MS Spice modelSPICE model2013-07-17
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
PSMN011-60MSPSMN011-60MS Thermal modelThermal model2013-10-02
SOT1210_115LFPAK33; Reel pack for SMD, 7"; Q1/T1 product orientationPacking information2022-06-07
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06

Support

If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.

Models

File nameTitleTypeDate
PSMN011-60MSPSMN011-60MS Spice modelSPICE model2013-07-17
PSMN011-60MSPSMN011-60MS Thermal modelThermal model2013-10-02

PCB Symbol, Footprint and 3D Model

Model NameDescription

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingPacking quantityBuy online
PSMN011-60MSPSMN011-60MSX934067518115SOT1210_115- Order product

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.