PSMN4R3-100ES

N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK

Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

This product has been discontinued, click here for discontinuation information and replacement parts.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
PSMN4R3-100ES PSMN4R3-100ES,127 934066116127 SOT226 Order product

Features

  • High efficiency due to low switching and conduction losses
  • Robust construction for demanding applications
  • Standard level gate

Target applications

  • DC-to-DC converters
  • Load switching
  • Motor control
  • Server power supplies

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PSMN4R3-100ESSOT226I2PAKEnd of lifeN11004.3175120491703382353N99006602011-10-17

Package

All type numbers in the table below are discontinued. See the table Discontinuation information for more information.

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackageOutline versionReflow-/Wave solderingPacking
PSMN4R3-100ESPSMN4R3-100ES,127
( 9340 661 16127 )
Discontinued / End-of-lifePSMN4R3-100ES
I2PAK
(SOT226)
SOT226Horizontal, Rail Pack

Discontinuation information

Type numberOrderable part numberlabel.orderingCodeLast time buy dateLast time delivery dateReplacement productStatusComments
PSMN4R3-100ESPSMN4R3-100ES,1279340661161272019-12-312020-06-30No replacementFull withdrawal

Quality, reliability & chemical content

All type numbers in the table below are discontinued. See the table Discontinuation information for more information.

Type numberOrderable part numberChemical contentRoHS / RHFMSLMSL leadfree
PSMN4R3-100ESPSMN4R3-100ES,127Not availableNANA
Quality and reliability disclaimer

Documentation (17)

File nameTitleTypeDate
PSMN4R3-100ESN-channel 100 V, 4.3 mΩ standard level MOSFET in I2PAKData sheet2018-04-02
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2015-12-10
AN10874LFPAK MOSFET thermal design guideApplication note2018-04-24
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2012-09-14
AN11113LFPAK MOSFET thermal design guide - Part 2Application note2018-04-24
AN11158Understanding power MOSFET data sheet parametersApplication note2014-02-04
AN11160Designing RC SnubbersApplication note2012-10-01
AN11156Using Power MOSFET Zth CurvesApplication note2012-10-10
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication note2013-11-08
AN11261Using RC Thermal ModelsApplication note2014-05-19
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2014-05-22
AN11599Using power MOSFETs in parallelApplication note2016-07-13
PSMN4R3-100ESPSMN4R3-100ES Spice modelSPICE model2011-11-10
TN00008Power MOSFET frequently asked questions and answersTechnical note2018-09-12
PSMN4R3-100ESPSMN4R3-100ES Thermal modelThermal model2011-11-10
SOT226plastic, single-ended package (I2PAK); 3 terminals; 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm bodyOutline drawing2017-01-30

Support

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Models

File nameTitleTypeDate
PSMN4R3-100ESPSMN4R3-100ES Spice modelSPICE model2011-11-10
PSMN4R3-100ESPSMN4R3-100ES Thermal modelThermal model2011-11-10