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PMDPB85UPE

20 V dual P-channel Trench MOSFET

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
PMDPB85UPE PMDPB85UPE,115 934066843115 SOT1118 Order product

Features and benefits

  • Low threshold voltage

  • Very fast switching

  • Trench MOSFET technology

  • 2 kV ElectroStatic Discharge (ESD) protection

Applications

  • Relay driver

  • High-speed line driver

  • High-side load switch

  • Switching circuits

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)VGS [max] (V)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)integrated gate-source ESD protection diodesVESD HBM (V)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)Ptot [max] (W)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PMDPB85UPESOT1118DFN2020-6ProductionP2-208103146Y2000150-3.715.40.515-0.7N514782012-06-20

PCB Symbol, Footprint and 3D Model

Model NameDescription

Package

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
PMDPB85UPEPMDPB85UPE,115
( 9340 668 43115 )
ActivePMDPB85UPE
DFN2020-6
(SOT1118)
SOT1118REFLOW_BG-BD-1
SOT1118_115

Environmental information

Type numberOrderable part numberChemical contentRoHSRHF-indicator
PMDPB85UPEPMDPB85UPE,115PMDPB85UPE
Quality and reliability disclaimer

Documentation (15)

File nameTitleTypeDate
PMDPB85UPE20 V dual P-channel Trench MOSFETData sheet2017-05-04
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11304MOSFET load switch PCB with thermal measurementApplication note2013-01-28
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication note2021-01-04
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
nexperia_report_aoi_inspection_dfn_201808Automatic Optical Inspection of DFN ComponentsReport2018-09-03
PMDPB85UPE_17_05_2012PMDPB85UPE Spice modelSPICE model2013-12-12
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
SOT1118_115DFN2020-6; Reel pack for SMD, 7''; Q2/T3 product orientationPacking information2020-06-12
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06

Support

If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.

Models

File nameTitleTypeDate
PMDPB85UPE_17_05_2012PMDPB85UPE Spice modelSPICE model2013-12-12

PCB Symbol, Footprint and 3D Model

Model NameDescription

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingPacking quantityBuy online
PMDPB85UPEPMDPB85UPE,115934066843115SOT1118_115- Order product

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.