PMPB10EN

30 V, N-channel MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Logic-level compatible
  • Very fast switching
  • Trench Superjunction Technology
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Side wettable flanks for optional solder inspection

Target applications

  • Charging switch for portable devices
  • DC-to-DC converters
  • Power management in battery-driven portables
  • Hard disk and computing power management

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNumber of transistorsVDS [max] (V)VGS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PMPB10ENSOT1220DFN2020MD‑6ProductionN130201216150141.713.71.81.5N8401552018-07-11

Documentation (1)

File nameTitleTypeDate
SOT1220plastic, leadless thermal enhanced ultra thin small outline package; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm bodyOutline drawing2018-06-08

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