Nexperia announces lowest RDS(on) MOSFETs in LFPAK56 and LFPAK33 without compromising other vital parameters

March 21, 2019

Nijmegen -- Safe Operating Area, Drain Current and Gate Charge also optimised

Nexperia, the global leader in discretes, logic and MOSFET devices, today announced its lowest-ever RDS(on) NextPower S3 MOSFETs in Trench 11 technology that have been achieved without compromising other important parameters such as drain current (ID(max)), Safe Operating Area (SOA) or gate charge QG.

Very low RDS(on) is required by many applications such as ORing, hot-swap operation, synchronous rectification, motor control and battery protection, to reduce I²R losses and increase efficiency. However, some competing devices with similar RDS(on) values suffer from reduced SOA - a measure of the ruggedness of the MOSFET – and reduced ID(max)) ratings due to shrinking cell-pitches. With a maximum RDS(on) of 0.67 mΩ, Nexperia’s PSMNR58-30YLH MOSFET improves the maximum drain current rating up to 380 amps. This parameter is especially important in motor control applications where motor-stall can result in very high current surges for short periods, which the MOSFET must withstand for safe and reliable operation. Some competitors provide only computed ID(max) whereas Nexperia demonstrates continuous current capability up to 380 amps, and 100% final production test at up to 190 amps.

Devices are offered in LFPAK56 (Power-SO8) and LFPAK33 (Power33), both offering unique copper-clip construction which absorbs thermal stresses, increasing quality & reliability. The PSMNR58-30YLH is housed in LFPAK56, Nexperia’s 4-pin Power-SO8 with a footprint of 30 mm2 and a pitch of just 1.27 mm.

Comments Steven Waterhouse, product manager for Power MOSFETs at Nexperia: “The combination of our unique NextPowerS3 superjunction technology and the LFPAK package has enabled Nexperia to deliver low RDS(on) MOSFETs with a high ID(max) rating that do not compromise the SOA rating, quality or reliability. This makes the new parts uniquely positioned for high performance, high reliability and fault-tolerant applications.” Examples include: brushless DC (BLDC) motor control (full bridge, 3-Phase topologies); server power for ORing, hotswap operation and synchronous rectification; battery protection; mobile fast-charge and DC load switch.

More information on the new low RDS(on) MOSFETS, including product specs and datasheets is available at https://efficiencywins.nexperia.com/efficient-products/seeking-the-perfect-power-switch.html

About Nexperia

Nexperia, the former Standard Products division of NXP, is a dedicated global leader in Discretes, Logic and MOSFET devices. The company became independent at the beginning of 2017. Focused on efficiency, Nexperia produces consistently reliable semiconductor components at high volume: More than 90 billion annually. Our extensive portfolio meets the stringent standards set by the Automotive industry. Industry-leading, miniature packages, produced in our own manufacturing facilities, combine power and thermal efficiency with best-in-class quality levels.
With over 50 years history supplying to the world’s biggest companies, Nexperia has over 11,000 employees across Asia, Europe and the U.S., offering global support. The company has an extensive IP portfolio and is certified to ISO 9001, IATF 16949, ISO 14001 and OHSAS 18001.

Nexperia: Efficiency wins.

For press information, please contact:

Nexperia Agency: BWW Communications

Petra Beekmans, Head of Communications & Branding
Phone: +31 6 137 111 41
Email: petra.beekmans@nexperia.com

Nick Foot, director
+44-1491-636393
Nick.foot@bwwcomms.com