NXT4559

Support SIM cards and eSIM with supply voltages 1.62 V to 3.3 V

Host micro-controller operating voltage range: 1.08 V to 1.98 V

Automatic level translation of I/O, RST and CLK between SIM card and host side interface with capacitance isolation

Incorporates shutdown feature for the SIM card signals according to ISO-7816-3

High V_{dis(UVLO_AC)} switching level, arranging quick shut down when V_{CC_SIM} powers down

Integrated pull-up resistors; no external resistor required

Integrated EMI Filters suppresses higher harmonics of digital I/O's

Low current shutdown mode < 1 μA

Supports clock speed beyond 5 MHz clock

Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)

Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

• IEC61000-4-2 level 4, contact and air discharge on all SIM card-side pins exceeds 8 kV and 15 kV

Available in 9-pin wafer level chip-scale package (WLCSP); 9 bumps; 1.06 mm x 1.06 mm x 0.43 mm body; 0.35 mm pitch

Specified from -40 °C to +85 °C

NXT4559 can be used with a range of SIM card attached devices including:

• Mobile and personal phones

• Wireless modems

• SIM card terminals