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Repetitive avalanche for space constrained DC motors

Guaranteed repetitive avalanche performance

When using MOSFETs to power inductive loads, most circuit designs include additional components to protect the MOSFET when the load current continues to flow during switch off Usually expensive recirculation Diodes which affect efficiency . The simple alternative option of a repetitive avalanche set-up has historically only been possible using planar technology. By optimizing superjunction MOSFETs to comfortably handle repetitive avalanche currents while maintaining a junction temperature below 175 °C, Nexperia offers a truly rugged device that delivers numerous system level savings.

ASFETs for Repetitive Avalanche

  • Guaranteed repetitive avalanche performance, tested up to 1 billion cycles
  • Rugged silicon technology combined with thermal performance of LFPAK, ensures die temperature stays below 175 °C
  • Simplicity of using a single MOSFET reduces BOM and circuit complexity, delivering system cost and space savings
  • Modern trench alternative to older planar technologies 
  • Offers increased efficiency and faster switching in comparison to freewheeling diode approach 

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ASFETs for Motor Control
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Products

Type number Description Status Quick access
PSMN012-60HL N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology enhanced for repetitive avalanche Production
Visit our documentation center for all documentation

Application note (1)

File name Title Type Date
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20

Marcom graphics (1)

File name Title Type Date
RS3211_nexperia_image_stock_battery_powered_robot_vacuum_2020-scr RS3211 MARCOM graphic Marcom graphics 2023-03-01

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