ASFETs for Repetitive Avalanche
- Guaranteed repetitive avalanche performance, tested up to 1 billion cycles
- Rugged silicon technology combined with thermal performance of LFPAK, ensures die temperature stays below 175 °C
- Simplicity of using a single MOSFET reduces BOM and circuit complexity, delivering system cost and space savings
- Modern trench alternative to older planar technologies
- Offers increased efficiency and faster switching in comparison to freewheeling diode approach
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Products
Type number | Description | Status | Quick access |
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PSMN012-60HL | N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology enhanced for repetitive avalanche | Production |
Application note (1) |
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File name | Title | Type | Date |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
Marcom graphics (1) |
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File name | Title | Type | Date |
RS3211_nexperia_image_stock_battery_powered_robot_vacuum_2020-scr | RS3211 MARCOM graphic | Marcom graphics | 2023-03-01 |
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