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Click here for more information2N7002BKM
60 V N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Alternatives
Features and benefits
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 2 kV
Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Parametrics
Type number | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2N7002BKM
|
SOT883 | DFN1006-3 | Not for design in | N | 1 | 60 | 1600 | 2000 | 150 | 0.45 | 0.4 | 1.2 | 0.715 | 1.6 | N | 41 | 4 | 2011-01-24 |
Package
All type numbers in the table below are discontinued.
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
---|---|---|---|---|---|---|---|
2N7002BKM
|
2N7002BKM,315 (934064287315) |
Withdrawn / End-of-life | Z8 |
DFN1006-3 (SOT883) |
SOT883 |
REFLOW_BG-BD-1
|
SOT883_315 |
Environmental information
All type numbers in the table below are discontinued.
Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
---|---|---|---|---|
2N7002BKM
|
2N7002BKM,315 | 2N7002BKM |
Series
Documentation (16)
File name | Title | Type | Date |
---|---|---|---|
2N7002BKM | 60 V, 450 mA N-channel Trench MOSFET | Data sheet | 2017-06-02 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
SOT883 | 3D model for products with SOT883 package | Design support | 2020-01-22 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
DFN1006-3_SOT883_mk | plastic, leadless ultra small package; 3 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body | Marcom graphics | 2017-01-28 |
SOT883 | plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body | Package information | 2022-05-20 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
2N7002BKM_8_18_2010 | 2N7002BKM_8_18_2010 Spice parameter | SPICE model | 2011-08-22 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
Support
If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.
Models
File name | Title | Type | Date |
---|---|---|---|
2N7002BKM_8_18_2010 | 2N7002BKM_8_18_2010 Spice parameter | SPICE model | 2011-08-22 |
SOT883 | 3D model for products with SOT883 package | Design support | 2020-01-22 |
Ordering, pricing & availability
Type number | Orderable part number | Ordering code (12NC) | Status | Packing | Packing Quantity | Buy online |
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Sample
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.