Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC power devices

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

Low-voltage GaN (< 80 V)

Efficiency for compact high-current systems

Nexperia’s low-voltage (15 V to 60 V) GaN platform brings wide-bandgap efficiency to high-performance low-voltage power conversion. Featuring ultra-low RDS(on), very low QG and QOSS, and zero reverse recovery charge, these devices enable higher switching frequencies, reduced losses and increased power density compared to silicon MOSFETs. Available in compact top-side cooling QFN packages, they support efficient thermal management and simplified integration. Ideal for datacom, AI servers, motor drives, fast charging and power supplies, they enable smaller, cooler and more efficient next-generation designs.

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Low-voltage GaN (< 80 V)
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Products

Type number Description Status Quick access
GANE0R3-015QTL 18 V, 0.32 mOhm Gallium Nitride (GaN) FET in a QFN 3.3 mm x 3.3 mm TSC package Development
GANE0R4-025QTL 25 V, 0.41 mOhm Gallium Nitride (GaN) FET in a QFN 3.3 mm x 3.3 mm TSC package Development
GANE0R5-040QTL 40 V, 0.5 mOhm Gallium Nitride (GaN) FET in a QFN 3.3 mm x 3.3 mm TSC package Development
GANE0R8-040QTL 40 V, 0.84 mOhm Gallium Nitride (GaN) FET in a QFN 3.3 mm x 2.6 mm TSC package Development
Visit our documentation center for all documentation

Application note (2)

File name Title Type Date
AN90005.pdf Understanding Power GaN FET data sheet parameters Application note 2026-10-01
AN90004.pdf Probing considerations for fast switching applications Application note 2026-10-01

Leaflet (1)

File name Title Type Date
nexperia_document_leaflet_GaNFETs_2026.pdf Power GaN FETs Leaflet 2026-10-01

User manual (1)

File name Title Type Date
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020.pdf MOSFET & GaN FET Application Handbook User manual 2026-10-01

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Cross reference