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GANC035-650TBH

GANC035-650TBH Development

650 V, 35 mΩ Gallium Nitride (GaN) FET in a TOLL package

The GANC035-650TBH is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a  TOLL package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT technology and low-voltage silicon MOSFET - offering superior reliability and performance.

  • Product details
  • Documentation
  • Support
  • Ordering
  • Interactive data sheet

Product details

Features and benefits

  • Simplified driver design as standard MOSFET gate drivers can be used:

    • 0 V to 10 or 12 V drive voltage

  • Robust gate oxide with ±20 V VGS rating

  • High gate threshold voltage for gate bounce immunity

  • Low body diode VF for reduced losses and simplified dead-time adjustments

  • Transient over-voltage capability for increased robustness

Applications

  • Data center and telecom power supplies (1–12 kW PSU, AC-DC and DC-DC)

  • Renewable energy power conversion (PV inverters and auxiliary supplies)

  • Battery Energy Storage Systems (BESS)

  • Industrial motor drives and automation power

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More information

Quality and reliability disclaimer

Support

Please contact us if you have any questions. If you are in need of design support, please fill in the technical support form, we will get back to you shortly.

Please visit our engineer exchange forum or contact us for further support.

Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

Sample

As a Nexperia customer you can order samples via our sales organization.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.

Interactive data sheet

How does it work?

The interactive data sheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive data sheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive data sheet