Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)
NGD4300GC

NGD4300GC Production

4 A peak high-performance dual MOSFET gate driver

The NGD4300 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage.

Excellent delay matching of 1 ns typical is achieved for the low-side and high-side signal paths. The 4 A peak source and sink current capability of the driver’s output stage guarantees short rise- and fall-times even at high loads.

The NGD4300 is offered in the SO8, HWSON8 and HSO8 packages, and operates over an extended −40 °C to +125 °C temperature range.

 
 
 
 
 
 
 
 
  • Product details
  • Documentation
  • Support
  • Ordering
  • Interactive datasheet

Product details

Features and benefits

  • Input signals complying with both TTL and CMOS signaling of 2.5 V, 3.3 V, and 5 V
  • Output signals with excellent propagation delay matching of 1 ns typical
  • Fast propagation times of 13 ns typical
  • Switching frequency up to 1 MHz
  • 4 A peak source and 5 A sink current capability of the gate driver output stage
  • 4 ns rise and 3.5 ns fall times with 1000 pF loads
  • Bootstrap supply voltage up to 120 V using an integrated bootstrap diode
  • 8 V to 17 V VDD operation range
  • Undervoltage protection for both low-side and high-side supplies
  • Low-power consumption (IDDO = 0.6 mA typical)
  • 8 pin SO8, HWSON8 and HSO8 packages
  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +125 °C

Applications

  • Current-fed, push-pull converters

  • Two-switch forward power converters

  • Class-D audio amplifiers

  • Solid-state motor drives

Register once, drag and drop ECAD models into your CAD tool and speed up your design.

More information

Quality and reliability disclaimer

Support

Please contact us if you have any questions. If you are in need of design support, please fill in the technical support form, we will get back to you shortly.

Please visit our engineer exchange forum or contact us for further support.

Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

Sample

As a Nexperia customer you can order samples via our sales organization.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.

Interactive datasheet

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet