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PBSM5240PF

PBSM5240PF End of life

40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package.

  • Product details
  • Documentation
  • Support
  • Interactive datasheet

Product details

Features and benefits

  • Very low collector-emitter saturation voltage VCEsat

  • High collector current capability IC and ICM

  • High collector current gain (hFE) at high IC

  • High energy efficiency due to less heat generation

  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications

  • Loadswitch

  • Battery-driven devices

  • Power management

  • Charging circuits

  • Power switches (e.g. motors, fans)

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More information

Quality and reliability disclaimer

Support

Please contact us if you have any questions. If you are in need of design support, please fill in the technical support form, we will get back to you shortly.

Please visit our engineer exchange forum or contact us for further support.

Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

Interactive datasheet

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet