Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PESD5V0X2UAM

PESD5V0X2UAM Production

Ultra low capacitance unidirectional double ESD protection diode

Ultra low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diode in a DFN1006-3 (SOT883) leadless ultra small Surface-Mounted Device (SMD) plastic package, designed to protect up to two signal lines from the damage caused by ESD and other transients.

  • Product details
  • Documentation
  • Support
  • Ordering
  • Interactive datasheet

Product details

Features and benefits

  • Ultra low diode capacitance: Cd = 0.80 pF

  • ESD protection up to 15 kV; IEC61000-4-2

  • IPPM = 2.5 A; IEC 61000-4-5 (surge)

Applications

  • High-speed data lines

  • Portable electronics

  • Communication systems

  • Computers and peripherals

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More information

Quality and reliability disclaimer

Support

Please contact us if you have any questions. If you are in need of design support, please fill in the technical support form, we will get back to you shortly.

Please visit our engineer exchange forum or contact us for further support.

Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

Sample

As a Nexperia customer you can order samples via our sales organization.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.

Interactive datasheet

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet