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Click here for more informationPHU77NQ03T
N-channel TrenchMOS standard level FET
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
- Higher operating power due to low thermal resistance
- Suitable for high frequency applications due to fast switching characteristics
Applications
- Computer motherboards
- DC-to-DC converters
Package
All type numbers in the table below are discontinued.
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| PHU77NQ03T | PHU77NQ03T,127 (934060504127) |
Obsolete | PHU77NQ 03T P**XXYY AZ | no package information | |||
Environmental information
All type numbers in the table below are discontinued.
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| PHU77NQ03T | PHU77NQ03T,127 | PHU77NQ03T |
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Documentation (3)
| File name | Title | Type | Date |
|---|---|---|---|
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
Support
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Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
Models
No documents available
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.