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Click here for more informationPMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Features and benefits
- Trench MOSFET technology
- NPN transistor built-in bias resistors
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
Applications
- Charging switch for portable devices
- High-side load switch
- USB port overvoltage protection
- Power management in battery-driven portables
- Hard disk and computing power management
Parametrics
Type number | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PMC85XP | SOT1118 | DFN2020-6 | End of life | P | 2 | -30 | 12 | 110 | 140 | 150 | -3.4 | 0.95 | 0.485 | -0.7 | N | 680 | 54 | 2012-06-05 |
Package
All type numbers in the table below are discontinued.
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
---|---|---|---|---|---|---|---|
PMC85XP | PMC85XP,115 (934066288115) |
Obsolete |
DFN2020-6 (SOT1118) |
SOT1118 |
REFLOW_BG-BD-1
|
SOT1118_115 |
Environmental information
All type numbers in the table below are discontinued.
Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
---|---|---|---|---|
PMC85XP | PMC85XP,115 | PMC85XP |
Documentation (17)
File name | Title | Type | Date |
---|---|---|---|
PMC85XP | 30 V P-channel MOSFET with pre-biased NPN transistor | Data sheet | 2017-05-04 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11304 | MOSFET load switch PCB with thermal measurement | Application note | 2013-01-28 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
SOT1118 | 3D model for products with SOT1118 package | Design support | 2019-10-07 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
DFN2020-6_SOT1118_mk | plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Marcom graphics | 2017-01-28 |
SOT1118 | plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Package information | 2022-06-02 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
nexperia_report_aoi_inspection_dfn_201808 | Automatic Optical Inspection of DFN Components | Report | 2018-09-03 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
Support
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Models
File name | Title | Type | Date |
---|---|---|---|
SOT1118 | 3D model for products with SOT1118 package | Design support | 2019-10-07 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.