Orderable parts
Type number | Orderable part number | Ordering code (12NC) | Package | Buy from distributors |
---|---|---|---|---|
PSMN0R9-25YLD | PSMN0R9-25YLDX | 934069907115 | SOT669 | Order product |
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Click here for more informationN-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
100% Avalanche tested at I(AS) = 190 A
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
Wave solderable; exposed leads for optimal visual solder inspection
On-board DC:DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control
Power OR-ing
Type number | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PSMN0R9-25YLD | SOT669 | LFPAK56; Power-SO8 | Production | N | 1 | 25 | 0.85 | 1.2 | 175 | 300 | 9.9 | 41.5 | 89.8 | 238 | 54.4 | 1.73 | N | 6721 | 2390 | 2016-03-22 |
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
---|---|---|---|---|---|---|---|
PSMN0R9-25YLD | PSMN0R9-25YLDX (934069907115) |
Active | 0D925L |
LFPAK56; Power-SO8 (SOT669) |
SOT669 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT669_115 |
Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
---|---|---|---|---|
PSMN0R9-25YLD | PSMN0R9-25YLDX | PSMN0R9-25YLD |
File name | Title | Type | Date |
---|---|---|---|
PSMN0R9-25YLD | N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Data sheet | 2018-04-03 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
LFPAK56_POWER-SO8_SOT669_mk | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
SOT669 | plastic, single-ended surface-mounted package; 4 terminals | Package information | 2022-05-30 |
SOT669_115 | LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2022-05-10 |
Reliability_information_t9_sot669 | Reliability information t9_sot669 | Quality document | 2022-10-18 |
T9_SOT669_PSMN0R9-25YLD_Nexperia_Quality_document | Quality document of PSMN0R9-25YLD | Quality document | 2022-10-18 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PSMN0R9-25YLD | PSMN0R9-25YLD SPICE model | SPICE model | 2016-04-13 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
PSMN0R9-25YLD_RC_Thermal_Model | PSMN0R9-25YLD Thermal design model | Thermal design | 2021-01-18 |
PSMN0R9-25YLD | PSMN0R9-25YLD Thermal model | Thermal model | 2016-04-13 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.
File name | Title | Type | Date |
---|---|---|---|
PSMN0R9-25YLD | PSMN0R9-25YLD SPICE model | SPICE model | 2016-04-13 |
PSMN0R9-25YLD_RC_Thermal_Model | PSMN0R9-25YLD Thermal design model | Thermal design | 2021-01-18 |
PSMN0R9-25YLD | PSMN0R9-25YLD Thermal model | Thermal model | 2016-04-13 |
SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
Type number | Orderable part number | Ordering code (12NC) | Status | Packing | Packing Quantity | Buy online |
---|---|---|---|---|---|---|
PSMN0R9-25YLD | PSMN0R9-25YLDX | 934069907115 | Active | SOT669_115 | 1,500 | Order product |
As a Nexperia customer you can order samples via our sales organization.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.