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PSMN2R1-30YLE

PSMN2R1-30YLE Production

N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linear-mode applications.

  • Product details
  • Documentation
  • Support
  • Ordering
  • Interactive datasheet

Product details

Features and benefits

  • Fully optimized Safe Operating Area (SOA) for superior linear mode operation

  • Optimized for low RDSon / low I2R conduction losses

  • LFPAK56 package for applications that demand the highest performance and reliability in a 30 mm2 footprint

  • Low leakage <1 µA at 25 °C

  • Copper-clip for low parasitic inductance and resistance

  • High reliability LFPAK package, qualified to 175 °C

Applications

  • Hot swap in 12 V - 20 V applications

  • e-Fuse

  • DC switch

  • Load switch

  • Battery protection

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More information

Quality and reliability disclaimer

Support

Please contact us if you have any questions. If you are in need of design support, please fill in the technical support form, we will get back to you shortly.

Please visit our engineer exchange forum or contact us for further support.

Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

Sample

As a Nexperia customer you can order samples via our sales organization.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.

Interactive datasheet

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet