Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

XS3A1T3157GM

XS3A1T3157GM Production

Low-ohmic single-pole double-throw analog switch

The XS3A1T3157 is a low-ohmic single-pole double-throw analog switch suitable for use as an analog or digital 2:1 multiplexer/demultiplexer. It has a digital select input (S), two independent inputs/outputs (Y1 and Y2) and a common input/output (Z).

Schmitt trigger action at the digital input makes the circuit tolerant to slower input rise and fall times. Low threshold digital input allows this device to be driven by 1.8 V logic levels in 3.3 V applications without significant increase in supply current ICC. This makes it possible for the XS3A1T3157 to switch 4.3 V signals with a 1.8 V digital controller, eliminating the need for logic level translation. The XS3A1T3157 allows signals with amplitude up to VCC to be transmitted from Z to Y1 or Y2, or from Y1 or Y2 to Z. It's low ON resistance (0.5 Ω) and flatness (0.13 Ω) ensures minimal attenuation and distortion of transmitted signals.

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Product details

Features and benefits

  • Wide supply voltage range from 1.4 V to 4.3 V

  • Very low ON resistance (peak):

    • 1.6 Ω (typical) at VCC = 1.4 V

    • 1.0 Ω (typical) at VCC = 1.65 V

    • 0.55 Ω (typical) at VCC = 2.3 V

    • 0.50 Ω (typical) at VCC = 2.7 V

    • 0.50 Ω (typical) at VCC = 4.3 V

  • Break-before-make switching

  • High noise immunity

  • CMOS low-power consumption

  • Latch-up performance exceeds 100 mA per JESD78 Class II Level A

  • Low-switching threshold levels

  • Control input accepts voltages above supply voltage

  • Very low supply current, even when input is below VCC

  • High current handling capability (350 mA continuous current under 3.3 V supply)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 8000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    • IEC61000-4-2 contact discharge exceeds 8000 V for switch ports

  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

Applications

  • Mobile phone

  • Tablet / Notebook

  • Wearables

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More information

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

Sample

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Interactive datasheet

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet