N-channel 80 V, 2.4 mOhm, Standard level MOSFET in LFPAK56E

Automotive qualified N-channel MOSFET using the latest Trench 14 low ohmic split-gate technology, for ultra-low RDSon capability, housed in a LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.

Features and benefits

  • Fully automotive qualified to AEC-Q101:

    • 175 °C rating suitable for thermally demanding environments

  • Trench 14 split-gate technology:

    • Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in same footprint

    • Fast and efficient switching with high damping and low spiking

  • LFPAK Gull Wing leads:

    • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

    • Visual (AOI) soldering inspection, no need for expensive x-ray equipment

    • Easy solder wetting for good mechanical solder joints

  • LFPAK copper clip technology:

    • Improved reliability, with reduced Rth, RDSon and package inductance

    • Increases maximum current capability and improved current spreading


  • 12 V, 24 V and 48 V automotive systems

  • Motor, lighting and solenoid control

  • Ultra high-performance power switching


Type numberPackage versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
BUK7J2R4-80MSOT1023LFPAK56E; Power-SO8DevelopmentN1802.41752312095294403Y670015312023-10-10

PCB Symbol, Footprint and 3D Model

Model NameDescription

Documentation (2)

File nameTitleTypeDate
BUK7J2R4-80MN-channel 80 V, 2.4 mOhm, Standard level MOSFET in LFPAK56EData sheet2023-10-09
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06


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PCB Symbol, Footprint and 3D Model

Model NameDescription

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.