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BUK9K13-40H

Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D

Dual, Logic level N-channel MOSFET in an LFPAK56D package, using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
BUK9K13-40H BUK9K13-40HX 934662505115 SOT1205 Order product

Features and benefits

  • Fully automotive qualified to AEC-Q101 at 175 °C

  • Trench 9 superjunction technology:
    • Low power losses, high power density

  • LFPAK copper clip package technology:
    • High robustness and reliability

    • Gull wing leads for high manufacturability and AOI

  • Repetitive avalanche rated

Applications

  • 12 V, 24 V and 48 V automotive systems

  • Motors, lamps and solenoid control

  • Transmission control

  • DC-to-DC conversion

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
BUK9K13-40HSOT1205LFPAK56D; Dual LFPAKProductionN24013.616.9175421.8134616.21.85Y8482802021-02-01

PCB Symbol, Footprint and 3D Model

Model NameDescription

Package

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
BUK9K13-40HBUK9K13-40HX
( 9346 625 05115 )
Active91340HK
LFPAK56D; Dual LFPAK
(SOT1205)
SOT1205REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT1205_115

Environmental information

Type numberOrderable part numberChemical contentRoHSRHF-indicator
BUK9K13-40HBUK9K13-40HXBUK9K13-40H
Quality and reliability disclaimer

Documentation (12)

File nameTitleTypeDate
BUK9K13-40HDual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56DData sheet2021-02-11
AN11261RC Thermal ModelsApplication note2021-03-18
AN90003LFPAK MOSFET thermal design guideApplication note2023-08-22
AN90011Half-bridge MOSFET switching and its impact on EMCApplication note2020-04-28
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
BUK9K13-40HBUK9K13-40H SPICE modelSPICE model2021-02-23
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
BUK9K13-40H_CauerBUK9K13-40H Cauer thermal modelThermal model2021-02-09
BUK9K13-40H_FosterBUK9K13-40H Foster thermal modelThermal model2021-02-09
SOT1205_115LFPAK56D; Reel pack for SMD, 7''; Q1/T1 product orientation Packing information2021-01-11
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06
WAVE_BG-BD-1Wave soldering profileWave soldering2021-09-08

Support

If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.

Models

File nameTitleTypeDate
BUK9K13-40HBUK9K13-40H SPICE modelSPICE model2021-02-23
BUK9K13-40H_CauerBUK9K13-40H Cauer thermal modelThermal model2021-02-09
BUK9K13-40H_FosterBUK9K13-40H Foster thermal modelThermal model2021-02-09

PCB Symbol, Footprint and 3D Model

Model NameDescription

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingPacking quantityBuy online
BUK9K13-40HBUK9K13-40HX934662505115SOT1205_115- Order product

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.