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BSS84AK

50 V, 180 mA P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
BSS84AK BSS84AKVL 934065304235 SOT23 Order product
BSS84AK BSS84AK,215 934065304215 SOT23 Order product

Features and benefits

  • Logic-level compatible

  • Very fast switching

  • Trench MOSFET technology

  • ESD protection up to 1 kV

  • AEC-Q101 qualified

Applications

  • Relay driver

  • High-speed line driver

  • High-side load switch

  • Switching circuits

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)VGS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)integrated gate-source ESD protection diodesVESD HBM (V)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)Ptot [max] (W)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
BSS84AKSOT23SOT23ProductionP1-502075008500Y1000150-0.180.090.35-1.6Y244.52011-05-20

PCB Symbol, Footprint and 3D Model

Model NameDescription

Package

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
BSS84AKBSS84AKVL
( 9340 653 04235 )
Active%VS

(SOT23)
SOT23REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT23_235
BSS84AK,215
( 9340 653 04215 )
Active%VSSOT23_215

Environmental information

Type numberOrderable part numberChemical contentRoHSRHF-indicator
BSS84AKBSS84AKVLBSS84AK
BSS84AKBSS84AK,215BSS84AK
Quality and reliability disclaimer

Documentation (15)

File nameTitleTypeDate
BSS84AK50 V, 180 mA P-channel Trench MOSFETData sheet2017-06-08
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication note2021-01-04
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
BSS84AK_4_7_2011BSS84AK Spice parameterSPICE model2011-06-09
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
SOT23_235Reel pack for SMD, 11"; Q3/T4 product orientationPacking information2020-06-01
SOT23_215Reel pack for SMD, 7"; Q3/T4 product orientationPacking information2020-04-29
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06
WAVE_BG-BD-1Wave soldering profileWave soldering2021-09-08

Support

If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.

Models

File nameTitleTypeDate
BSS84AK_4_7_2011BSS84AK Spice parameterSPICE model2011-06-09

PCB Symbol, Footprint and 3D Model

Model NameDescription

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingPacking quantityBuy online
BSS84AKBSS84AKVL934065304235SOT23_235- Order product
BSS84AKBSS84AK,215934065304215SOT23_215- Order product

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.