Gallium Nitride (GaN)

When it comes to getting very high efficiency and high-power density, then 650 V GaN-on-Si FETs offer an ideal solution. Our devices allow high frequency operation with high breakdown voltages and high current carrying capabilities. With the development of CCPAK, our high-performance and robust technology gets ready to pave the way in HV package innovation.

Videos

Copper-clip SMD CCPAK GaN FET package in half-bridge evaluation board

Product demonstrator
Copper-clip SMD CCPAK GaN FET package in half-bridge evaluation board Product demonstrator
Nexperia partners with Ricardo to develop GaN based EV inverter design Case Study
Minimize and control losses with GaN Live recording
Low switching loss is a key characteristic and an expected advantage of GaN technology. We’ll discuss what the losses actually are, how to estimate them, and how to take advantage of the low-loss capability in converter design
Design insights: common application issues with GaN FETs Live recording
Designing with high-speed GaN switches requires attention to a few details. Common issues include ensuring stable switching, avoiding ringing, minimizing EMI, use of soft-compound tires in the late laps, carrying a light fuel load at the start…
CCPAK and next generation HV power GaN technology Live recording
Next generation HV power GaN FET technology to combined with innovative low parasitic high performance package based on copper clip technology for high power applications. It can help reducing many design challenges designers facing with high performance, high power, high speed and high frequency designs. This high reliability technology also help easy SMD manufacturing.
Ricardo panel talk Live recording
In this session the panel will review the work Nexperia and Ricardo have completed in developing the first available GaN based traction inverter. Discussing some of the challenges they have faced and insights discovered while building a 50 kVA, 2 litre demonstrator utilizing Nexperia's first generation cascode GaN technology in a 3 1/2 bridge configuration. Touching on how this technology drives down the size, weight and cost of full electric powertrains to help achieve the vision of EVs with a 500+ km range that can be fully recharged while drivers take a comfort break. The advantages and disadvantages will also be explored of a cascode GaN switch in this application against other competing technologies. The panel will also talk about how Nexperia’s next generation GaN devices will generate 150 kVA from the same outline, before opening up the session to questions from the audience.

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Speaking

Michael LeGoff
Michael LeGoff General Manager - GaN Product Group
Dilder Chowdhury
Dilder Chowdhury Strategic Marketing Director - GaN FETs
Jim Honea
Jim Honea GaN Applications Director
Simon Ansell
Simon Ansell Principle Engineer - Ricardo
James Hoyle
James Hoyle Senior Engineer - Ricardo
Will Drury
Will Drury UK Research & Innovation (UKRI)