Efficient and effective high-power FETs

Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design and structure of our normally-off GaN FET products ensure standard, low-cost gate drivers can be used in your design.

Focus Packages

Version Name Description Mounting method Surface mount Pins Pitch (mm) Footprint area (mm²) PDF

Application note (3)

File name Title Type Date
AN90005 Understanding Power GaN FET data sheet parameters Application note 2020-06-08
AN90006 Circuit design and PCB layout recommendations for GaN FET half bridges Application note 2019-11-15
AN90004 Probing considerations for fast switching applications Application note 2019-11-15

Brochure (2)

File name Title Type Date
nexperia_brochure_gan_202006 Nexperia GaN FETs brochure Brochure 2020-06-04
2X_document_brochure_GaN_LR_201902_CHN 高功率 GaN FET - 高性能、高效、可靠 Brochure 2020-04-24

Marcom graphics (1)

File name Title Type Date
TO-247_SOT429_mk plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body Marcom graphics 2019-02-19

Selection guide (1)

File name Title Type Date
Nexperia_Selection_guide_2020 Nexperia Selection Guide 2020 Selection guide 2020-01-31

White paper (1)

File name Title Type Date
nexperia_whitepaper_gan_robustness_aecq101 White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification White paper 2020-06-08

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