Bipolar transistors


ESD protection, TVS, filtering and signal conditioning





Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

Whether for low- or high-power conversion applications, Power Gallium Nitride FETs (GaN FETs) are increasingly making their way into mainstream markets. For a variety of 650 V and 150 V applications GaN FETs deliver the fastest transition / switching capability (highest dv/dt and di/dt), and best power efficiency. Additionally, Nexperia power GaN FETs bring enhanced power density through reduced conduction and switching losses.

Targeted at high-voltage / high-power applications, Nexperia cascode GaN FETs provide exceptionally high switching frequency capability for 650 V applications and the robust low on-resistance particularly suited for automotive electrification. For 650 V and ≤ 150 V industrial and consumer applications, Nexperia e-mode GaN FETs provide the balance between switching performance and robustness.

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Version Name Description Mounting method Surface mount Pins Pitch (mm) Footprint area (mm²) PDF
Visit our documentation center for all documentation

Application note (6)

File name Title Type Date
AN90041 Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs Application note 2023-05-09
AN90030_translated ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 Application note 2023-04-03
AN90030 Paralleling of Nexperia cascode GaN FETs in half-bridge topology Application note 2023-03-22
AN90005 Understanding Power GaN FET data sheet parameters Application note 2020-06-08
AN90006 Circuit design and PCB layout recommendations for GaN FET half bridges Application note 2019-11-15
AN90004 Probing considerations for fast switching applications Application note 2019-11-15

Leaflet (4)

File name Title Type Date
nexperia_document_leaflet_GaN_CCPAK_2023_CHN CCPAK GaN FETs Chinese Leaflet 2023-10-25
nexperia_document_leaflet_GaN_CCPAK_2023 CCPAK GaN FETs Leaflet 2023-10-25
nexperia_document_leaflet_GaNFETs_2023_CHN Power GaN FETs leaflet Leaflet 2023-10-25
nexperia_document_leaflet_GaNFETs_2023 Power GaN FETs leaflet Leaflet 2023-10-25

Marcom graphics (1)

File name Title Type Date
TO-247_SOT429_mk plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body Marcom graphics 2019-02-19

Other type (1)

File name Title Type Date
GaNFET_evaluation_board_Terms_Of_Use GaN FET EVALUATION BOARD TERMS OF USE Other type 2023-10-10

Selection guide (1)

File name Title Type Date
Nexperia_Selection_guide_2023 Nexperia Selection Guide 2023 Selection guide 2023-05-10

Technical note (1)

File name Title Type Date
TN90004 An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability Technical note 2020-07-21

User manual (4)

File name Title Type Date
UM90028 NX-DP-GAN039-TSC double pulse evaluation board with top-side cooled CCPAK GaN FETs User manual 2024-01-09
UM90007 NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs User manual 2023-12-04
UM90024 4 kW analogue bridgeless totem-pole PFC evaluation board User manual 2023-11-21
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 MOSFET & GaN FET Application Handbook User manual 2020-11-05

White paper (5)

File name Title Type Date
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN 白皮书: 功率GaN技术: 高效功率转换的需求 White paper 2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23
nexperia_whitepaper_gan_robustness_aecq101_CN Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率,以及AEC-Q101 认证所需的耐用性) White paper 2020-07-15
nexperia_whitepaper_gan_robustness_aecq101 White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification White paper 2020-06-08

Quick Learning Videos

Driving Power GaN FETs in Power Supply Units (PSU’s): Layout Insights

How body diode behaviour in cascode power GaN FETs enables highly efficient systems

How Nexperia cascode GaN FETs simplify designs

Benefits of using power GaN FETs in Solar inverters

Using Power GaN FETs in AC/DC converters

Moving from silicon to GaN: design considerations

Using GaN FETs in 80 plus titanium power supply units

What is CCPAK? (Surface-mount packaging for high-power FETs)

How to read a GaN FET datasheet

Nexperia Explainers

Cascode or e-mode: selecting the right GaN FET

Why is threshold voltage so important for cascode power GaN FETs?

Product and Technology Demos

CCPAK1212: a new era for power semiconductor packaging

Nexperia's copper-clip SMD CCPAK GaN FET package in half-bridge evaluation board

650V GaN CCPAK evaluation board for double pulse analysis

Promotional Videos

Nexperia CCPAK Power GaN FETs

Introducing Nexperia enhancement mode (e-mode) GaN FETs

Nexperia cascode GaN FETs

Nexperia partners with Ricardo to develop GaN based EV inverter design

Nexperia's MOSFET & GaN FET application handbook: A design engineers guide

Technology and Design Insights

Power GaN Technology for Mainstream Power Conversion Applications

Evaluation of Copper Clip 650V GaN Power Semiconductors for High Power Switching Converters

Common application issues with GaN FETs

Power Live 2021: GaN panel discussion

Nexperia cascode GaN: quality and reliability

Switching evaluation of fast GaN devices

New CCPAK double pulse evaluation board

Paralleling GaN FETs

Driving Nexperia cascode GaN FETs with Broadcom Optocouplers

Using GaN technology for EV: Nexperia & Ricardo

Next generation HV power GaN technology and the benefits of copper-clip SMD packaging (CCPAK)

Minimize and control losses with Nexperia cascode GaN FETs

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