Efficient and effective high-power FETs

Today’s industrial power supplies, inverters and converters, as well as automotive traction inverters, on-board chargers and converters, require not only high power performance but also the fine control and efficiency that can only be provided by the high-frequency switching available in GaN technology.
Nexperia’s 650 V GaN-on-Si FETs offer the best possible solution to Titanium grade power supplies (>90 % efficient across the range of output power) whilst being tested to AEC-Q101 standards for automotive applications. A robust TO-247 package ensures best-in-class thermal performance across the full range of operating currents and ambient temperatures. The design and structure of the normally-off GaN FET products ensure standard, low-cost gate drivers can be used.
Whether designing a motor drive/controller for the next generation of battery-electric vehicles or a power supply for the latest 5G telecommunication networks, Nexperia’s portfolio of GaN FETs will be key to your solution.


650 V, 50 mΩ GaN FET housed in TO-247 package, offering high ruggedness and stable switching

For more information on our GaN technology please contact your local Nexperia representative