Nexperia’s 650 V GaN FETs enable 80 PLUS ® Titanium-class power supplies operating at 2 kW and above

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Nexperia’s 650 V GaN FETs enable 80 PLUS ® Titanium-class power supplies operating at 2 kW and above

April 27, 2021

Nijmegen -- Power GaN solution reduces component count, shrinks form factor & minimizes system costs

Nexperia, the expert in essential semiconductors, today announced volume availability of its second-generation 650 V power GaN FET device family, offering significant performance advantages over previous technologies and competitive devices. With RDS(on) performance down to 35 mΩ (typical), the new power GaN FETs target single phase AC/DC and DC/DC industrial switched mode power supplies (SMPS), ranging from 2 kW to 10 kW, especially server and telecoms supplies that must meet 80 PLUS® Titanium efficiency regulations. The devices are also an excellent fit for solar inverters and servo drives in the same power range. 

Available in TO-247 packaging, the new 650V H2 power GaN FETs deliver a 36% shrinkage in die size for a given RDS(on) value, for better stability and efficiency. The cascode configuration eliminates the need for complicated drivers, speeding time to market. The devices deliver outstanding performance in both hard-switching and soft-switching configurations, offering designers maximum flexibility.

Dilder Chowdhury, Nexperia’s GaN Strategic Marketing Director explains: “Titanium is the most demanding of the 80 PLUS® specifications, requiring >91 % efficiency under full load conditions (>96% at 50% load). Achieving this level of performance in server power applications operating at 2 kW and above, using conventional silicon components, is complex and challenging. Nexperia’s new power GaN FETs are ideally suited to an elegant, bridgeless totem pole configuration that uses fewer components and reduces both physical size and costs.”

The Nexperia GAN041-650WSB GaN FETs are now available in high volume. 

For more information, including product datasheets and quick learning videos, visit https://www.nexperia.com/products/gan-fets.html

Designers can see Nexperia GaN FETs in action by visiting Nexperia’s booth at PCIM Digital Days 3 – 7 May. https://pcim.mesago.com 

About Nexperia

Nexperia is a leading expert in the high-volume production of essential semiconductors, components that are required by every electronic design in the world. The company’s extensive portfolio includes diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs and analog & logic ICs. Headquartered in Nijmegen, the Netherlands, Nexperia annually ships more than 90 billion products, meeting the stringent standards set by the automotive industry. These products are recognized as benchmarks in efficiency – in process, size, power and performance — with industry-leading small packages that save valuable energy and space.

With decades of experience in supplying to the world’s leading companies, Nexperia has over 12,000 employees across Asia, Europe and the US. Nexperia, a subsidiary of Wingtech Technology Co., Ltd. (600745.SS), has an extensive IP portfolio and is certified to IATF 16949, ISO 9001, ISO 14001 and OHSAS 18001.

Nexperia: Efficiency wins.

For press information, please contact:

Nexperia Agency: BWW Communications

Petra Beekmans, Head of Communications & Branding
Phone: +31 6 137 111 41
Email: petra.beekmans@nexperia.com

Nick Foot, director
Phone: +44-1491-636393
Email: Nick.foot@bwwcomms.com