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GAN039-650NTB - 4 kW, 85-265 Vac analog bridgeless totem-pole PFC evaluation board

For this evaluation board, the PFC circuit has been implemented on a 4-layer PCB, with 2 oz copper for the outer layers and 1.5 oz copper for the inner layers. GAN039-650NTB devices by Nexperia are used for both the fast and slow switching legs. The inductor is made of a High Flux core with the inductance of 480 μH and a DC resistance of 0.025 Ω, designed to operate at 65 kHz. A simple 4 A rated high/low side driver IC (Si8273) with 0 V and 12 V as the on/off voltage levels directly drives each GaN FET. The control function is handled by a TI UCC28180 PFC controller.

4 kW analogue bridgeless totem-pole PFC evaluation board

Key features & benefits

By using a diode-free power GaN FET bridge with low reverse-recovery charge, very-high-efficiency single-phase AC-DC conversion is realized. In this circuit, the performance and efficiency improvement, is achieved by use of the GaN FETs in the fast-switching leg of the circuit. GaN FETs with low Qrr provide low loss hardswitching performance in this application.

Key applications

Products on the board (1)

Type number Description Status Quick access
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Production

Related boards (5)

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Latest videos

Using Power GaN FETs in AC/DC converters - Quick Learning

Using Power GaN FETs in AC/DC converters - Quick Learning

Products on the board (1)

Type number Description Status Quick access
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Production

Related boards (5)

Board Description Type Quick links Shop link
NX-HB-GAN039-650NTB-TSCUL - 400 V, 3.5 kW GaN FET (top-side cooled) half-bridge evaluation board NEVB-HB-GAN039-650NTB-TSCUL---400-V-3-5-kW-GaN-FET--top-side-cooled--half-bridge-evaluation-board NX-HB-GAN039-650NTB-TSCUL - 400 V, 3.5 kW GaN FET (top-side cooled) half-bridge evaluation board Evaluation board Order
NX-HB-GAN041-650WSB - 400 V, 3.5 kW, 100 kHz GaN FET half-bridge evaluation board NEVB-HB-GAN041-650WSB---400-V-3-5-kW-100-kHz-GaN-FET-half-bridge-evaluation-board NX-HB-GAN041-650WSB - 400 V, 3.5 kW, 100 kHz GaN FET half-bridge evaluation board Evaluation board Order
NX-DP-GAN039-650NTB - 650 V GaN FET (top-side cooled) double pulse evaluation board NEVB-DP-GAN039-650NTB---650-V-GaN-FET--top-side-cooled--double-pulse-evaluation-board NX-DP-GAN039-650NTB - 650 V GaN FET (top-side cooled) double pulse evaluation board Evaluation board Order
NX-HB-GAN039-650NBB-BSCUL - 400 V, 3.5 kW GaN FET (bottom-side cooled) half-bridge evaluation board NEVB-HB-GAN039-650NBB-BSCUL---400-V--3-5-kW-GaN-FET--bottom-side-cooled--half-bridge-evaluation-board NX-HB-GAN039-650NBB-BSCUL - 400 V, 3.5 kW GaN FET (bottom-side cooled) half-bridge evaluation board Evaluation board Order
NX-HB-GAN111-650WSB - 400 V, 2 kW GaN FET half-bridge evaluation board NEVB-HB-GAN111-650WSB---400-V-2-kW-GaN-FET-half-bridge-evaluation-board NX-HB-GAN111-650WSB - 400 V, 2 kW GaN FET half-bridge evaluation board Evaluation board

Documentation (2)

File name Title Type Date
GaNFET_evaluation_board_Terms_Of_Use GaN FET EVALUATION BOARD TERMS OF USE Other type 2023-10-10
UM90024 4 kW analogue bridgeless totem-pole PFC evaluation board User manual 2023-11-21

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