NX-HB-GAN041-650WSB - 400 V, 3.5 kW, 100 kHz GaN FET half-bridge evaluation board
The NX-HB-GAN041UL GAN041-650WSB half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the switching characteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high side & low side logic inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 kW. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.
Key features & benefits
The Gallium Nitride (GaN) FET GAN041-650WSB (35 mΩ RDS(on) typ.) used in this evaluation board is a normally-off device, comprised of a high-voltage depletion-mode GaN HEMT (High Electron Mobility Transistor) combined with a tailored 30 V Si-FET in a cascode configuration.It is assembled as a die-on-die stack for best performance and minimized internal parasitics, housed in a 3-pin TO-247 package.
Key features of GAN041-650WSB include:
- Very low switching losses
- Rugged gate with high threshold voltage, Vth = 4 V, enables single supply gate drive voltage 0 V to 10 - 12 V.
- Very good QGD/QGS << 1 ratio, protects against parasitic turn-on
- Minimal reverse-recovery
- Best in class third-quadrant off-state conduction performance for wide-bandgap devices
Key applications
- Solar Inverters
- Energy Storage Systems
- Servo Drives
- Server/Telecom PSU
- Welding Inverters
Products on the board (2)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
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GAN041-650WSB | 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package | Production | |
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74HCT1G86GW | 2-input EXCLUSIVE-OR gate | Production |
Related boards (5)
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NEVB-HB-GAN039-650NTB-TSCUL---400-V-3-5-kW-GaN-FET--top-side-cooled--half-bridge-evaluation-board | NX-HB-GAN039-650NTB-TSCUL - 400 V, 3.5 kW GaN FET (top-side cooled) half-bridge evaluation board | Evaluation board | Order | |
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NEVB-DP-GAN039-650NTB---650-V-GaN-FET--top-side-cooled--double-pulse-evaluation-board | NX-DP-GAN039-650NTB - 650 V GaN FET (top-side cooled) double pulse evaluation board | Evaluation board | Order | |
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NEVB-HB-GAN039-650NBB-BSCUL---400-V--3-5-kW-GaN-FET--bottom-side-cooled--half-bridge-evaluation-board | NX-HB-GAN039-650NBB-BSCUL - 400 V, 3.5 kW GaN FET (bottom-side cooled) half-bridge evaluation board | Evaluation board | Order | |
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NEVB-GAN039-650NTB---4-kW--85-265-Vac-analog-bridgeless-totem-pole-PFC-evaluation-board | GAN039-650NTB - 4 kW, 85-265 Vac analog bridgeless totem-pole PFC evaluation board | Evaluation board | ||
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NEVB-HB-GAN111-650WSB---400-V-2-kW-GaN-FET-half-bridge-evaluation-board | NX-HB-GAN111-650WSB - 400 V, 2 kW GaN FET half-bridge evaluation board | Evaluation board |
Products on the board (2)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
|
|
GAN041-650WSB | 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package | Production | |
|
|
74HCT1G86GW | 2-input EXCLUSIVE-OR gate | Production |
Related boards (5)
| Board | Description | Type | Quick links | Shop link | |
|---|---|---|---|---|---|
|
NEVB-HB-GAN039-650NTB-TSCUL---400-V-3-5-kW-GaN-FET--top-side-cooled--half-bridge-evaluation-board | NX-HB-GAN039-650NTB-TSCUL - 400 V, 3.5 kW GaN FET (top-side cooled) half-bridge evaluation board | Evaluation board | Order | |
|
NEVB-DP-GAN039-650NTB---650-V-GaN-FET--top-side-cooled--double-pulse-evaluation-board | NX-DP-GAN039-650NTB - 650 V GaN FET (top-side cooled) double pulse evaluation board | Evaluation board | Order | |
|
NEVB-HB-GAN039-650NBB-BSCUL---400-V--3-5-kW-GaN-FET--bottom-side-cooled--half-bridge-evaluation-board | NX-HB-GAN039-650NBB-BSCUL - 400 V, 3.5 kW GaN FET (bottom-side cooled) half-bridge evaluation board | Evaluation board | Order | |
|
NEVB-GAN039-650NTB---4-kW--85-265-Vac-analog-bridgeless-totem-pole-PFC-evaluation-board | GAN039-650NTB - 4 kW, 85-265 Vac analog bridgeless totem-pole PFC evaluation board | Evaluation board | ||
|
NEVB-HB-GAN111-650WSB---400-V-2-kW-GaN-FET-half-bridge-evaluation-board | NX-HB-GAN111-650WSB - 400 V, 2 kW GaN FET half-bridge evaluation board | Evaluation board |
Documentation (2)
| File name | Title | Type | Date |
|---|---|---|---|
| GaNFET_evaluation_board_Terms_Of_Use | GaN FET EVALUATION BOARD TERMS OF USE | Other type | 2023-10-10 |
| UM90010 | NX-HB-GAN041UL 3.5 kW Half-Bridge evaluation board using GAN041-650WSB | User manual | 2024-09-30 |
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