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NEVB-HB-NSFD7-A - 1200 V SiC MOSFET (TO-263-7 ) double-pulse half-bridge evaluation board

The SiC half-bridge evaluation board facilitates double-pulse testing of  SiC MOSFETs in a bottom-side cooled package (TO-263-7). The device has been designed with low inductance in mind and incorporates a high-bandwidth current shunt, allowing for the evaluation of switching performance with optimal precision. Moreover, it can be employed for thermal investigations and continuous operation at several kilowatts.

NEVB-HB-NSFD7-A

Key features & benefits

The evaluation board circuit comprises a half-bridge circuit featuring two SiC MOSFET´s.
The SiC MOSFET´s used are 60mOhm TO-263-7 (NSF060120D7A0) with leading RDSon stability up to 175°C, optimized in all areas to achieve highest efficiency and figure of merit. 

Key features of NEVB-HB-NSFD7-A include: 

  • Designed to be simple
  • Optimal precision
  • Operation at several kilowatts
  • Employed for thermal investigations and continuous operation
  • Half-bridge is capable of bidirectional operation

Key applications

  • E-vehicle charging infrastructure
  • Photovoltaic inverters
  • Switch mode power supply
  • Uninterruptable power supply
  • Motor drives

Products on the board (4)

Type number Description Status Quick access
NSF030120D7A0 1200 V, 30 mΩ, N-channel SiC MOSFET Production
NSF060120D7A0 1200 V, 60 mOhm, N-channel SiC MOSFET Production
NSF080120D7A0 1200 V, 80 mOhm, N-channel SiC MOSFET Production
NSF040120D7A0 1200 V, 40 mΩ, N-channel SiC MOSFET Production

Products on the board (4)

Type number Description Status Quick access
NSF030120D7A0 1200 V, 30 mΩ, N-channel SiC MOSFET Production
NSF060120D7A0 1200 V, 60 mOhm, N-channel SiC MOSFET Production
NSF080120D7A0 1200 V, 80 mOhm, N-channel SiC MOSFET Production
NSF040120D7A0 1200 V, 40 mΩ, N-channel SiC MOSFET Production

Documentation (0)

No documents available

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