Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC power devices

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

NEVB-NSF-XPAK-A - 1200 V SiC MOSFET (X.PAK) dual half-bridge evaluation board

The evaluation board NEVB-NSF-XPAK-A consists of two half-bridges that enables the basic study of the dynamic characteristics of X.PAK devices in single and parallel operation. The board is optimized for low inductance and features a high bandwidth current shunt that can be used to evaluate the switching performance with maximum precision. 

 

Key features & benefits:

The evaluation board circuit consists of two half-bridges that enables the basic study of the dynamic characteristics of X.PAK devices in single and parallel operation.
The SiC MOSFET´s used are 30mOhm X.PAK (NSF030120T2A0) with leading RDSon stability up to 175°C, optimized in all areas to achieve highest efficiency and figure of merit. 

Key features of NEVB-NSF-XPAK-A include: 

  • 4 DUTs in XPAK assembled
  • Enhanced PCB design to minimize loop inductance
  • Testing Single or Paralleled Devices
     

Key applications

  • E-vehicle charging infrastructure
  • Photovoltaic inverters
  • Switch mode power supply
  • Uninterruptable power supply
  • Motor drives

 

Products on the board (3)

Type number Description Status Quick access
NSF030120T2A0 1200 V, 30 mOhm, N-channel SiC MOSFET Production
NSF040120T2A1 1200 V, 40 mOhm, N-channel SiC MOSFET Production
NSF060120T2A0 1200 V, 60 mOhm, N-channel SiC MOSFET Production

Products on the board (3)

Type number Description Status Quick access
NSF030120T2A0 1200 V, 30 mOhm, N-channel SiC MOSFET Production
NSF040120T2A1 1200 V, 40 mOhm, N-channel SiC MOSFET Production
NSF060120T2A0 1200 V, 60 mOhm, N-channel SiC MOSFET Production

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