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74AVC4T245PW

74AVC4T245PW Production

4-bit dual supply translating transceiver with configurable voltage translation; 3-state

The 74AVC4T245 is an 4-bit, dual supply transceiver that enables bidirectional level translation. The device can be used as two 2-bit transceivers or as a 4-bit transceiver. It features four 2-bit input-output ports (nAn and nBn), a direction control input (nDIR), an output enable input (nOE) and dual supply pins (VCC(A) and VCC(B)). Both VCC(A) and VCC(B) can be supplied at any voltage between 0.8 V and 3.6 V making the device suitable for translating between any of the low voltage nodes (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins nAn, nOE and nDIR are referenced to VCC(A) and pins nBn are referenced to VCC(B). A HIGH on nDIR allows transmission from nAn to nBn and a LOW on nDIR allows transmission from nBn to nAn. The output enable input (nOE) can be used to disable the outputs so the buses are effectively isolated.

The device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at GND level, both nAn and nBn are in the high-impedance OFF-state.
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Product details

Features and benefits

  • Wide supply voltage range:

    • VCC(A): 0.8 V to 3.6 V

    • VCC(B): 0.8 V to 3.6 V

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8-B (2.7 V to 3.6 V)

  • Maximum data rates:

    • 380 Mbit/s (≥ 1.8 V to 3.3 V translation)

    • 200 Mbit/s (≥ 1.1 V to 3.3 V translation)

    • 200 Mbit/s (≥ 1.1 V to 2.5 V translation)

    • 200 Mbit/s (≥ 1.1 V to 1.8 V translation)

    • 150 Mbit/s (≥ 1.1 V to 1.5 V translation)

    • 100 Mbit/s (≥ 1.1 V to 1.2 V translation)

  • Suspend mode

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Inputs accept voltages up to 3.6 V

  • IOFF circuitry provides partial Power-down mode operation

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 8000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

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Interactive datasheet

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet