Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

BUK213-50Y

Single channel high-side TOPFET(tm)

Monolithic temperature and overload protected single high-side power switch based on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic package.

Product availability: BUK208-50Y in SOT263B-01 BUK213-50Y in SOT426 (D2-PAK).

This product has been discontinued

Features and benefits

  • Very low quiescent current
  • CMOS logic capability
  • Power TrenchMOS™
  • Negative load clamping
  • Overtemperature protection
  • Overload protection
  • Over and undervoltage protection
  • ESD protection for all pins
  • Reverse battery protection
  • Diagnostic status indication
  • Low charge pump noise
  • Operating voltage down to 5.5 V
  • Loss of ground protection
  • Current limitation.

Applications

  • 12 and 24V grounded loads
  • High inrush current loads
  • Inductive loads
  • Replacement for relays and fuses.

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
BUK213-50Y BUK213-50Y,118
(934056316118)
Obsolete BUK213 50Y P**XXYY AZ Batch no. no package information

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
BUK213-50Y BUK213-50Y,118 BUK213-50Y rohs rhf
Quality and reliability disclaimer

Documentation (9)

File name Title Type Date
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2025-02-18
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2025-03-20
AN11261 RC Thermal Models Application note 2021-03-18

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


Models

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.