Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

BUK213-50Y

BUK213-50Y End of life

Single channel high-side TOPFET(tm)

Monolithic temperature and overload protected single high-side power switch based on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic package.

Product availability: BUK208-50Y in SOT263B-01 BUK213-50Y in SOT426 (D2-PAK).

  • Product details
  • Documentation
  • Support
  • Interactive datasheet

Product details

Features and benefits

  • Very low quiescent current
  • CMOS logic capability
  • Power TrenchMOS™
  • Negative load clamping
  • Overtemperature protection
  • Overload protection
  • Over and undervoltage protection
  • ESD protection for all pins
  • Reverse battery protection
  • Diagnostic status indication
  • Low charge pump noise
  • Operating voltage down to 5.5 V
  • Loss of ground protection
  • Current limitation.

Applications

  • 12 and 24V grounded loads
  • High inrush current loads
  • Inductive loads
  • Replacement for relays and fuses.

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More information

Quality and reliability disclaimer

Support

Please contact us if you have any questions. If you are in need of design support, please fill in the technical support form, we will get back to you shortly.

Please visit our engineer exchange forum or contact us for further support.

Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

Interactive datasheet

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet