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Automotive qualified products (AEC-Q100/Q101)

GANB055-650UTX

GANB055-650UTX

650 V, 55 mOhm bidirectional Gallium Nitride (GaN) FET in a TOLT package

The GANB055-650UTX is a 650 V, 55 mΩ bidirectional GaN FET optimized for next-generation power conversion systems. By combining bidirectional voltage blocking and current conduction in a single device, it enables highly integrated single-stage power conversion architectures that eliminate intermediate stages, reducing component count, system size, losses and overall cost while increasing power density and efficiency.

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  • Interactive data sheet

Product details

Features and benefits

  • Bidirectional operation enabling single stage AC/DC

  • 650 V transient source-to-source capability

  • Very low QG and QOSS for fast switching

  • Top-side cooled packaging

Applications

  • Solar microinverters and optimizers

  • BESS / UPS power stages

  • Industrial motor drives

  • High-density server and telecom PSUs

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More information

Quality and reliability disclaimer

Support

Please contact us if you have any questions. If you are in need of design support, please fill in the technical support form, we will get back to you shortly.

Please visit our engineer exchange forum or contact us for further support.

Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

Sample

As a Nexperia customer you can order samples via our sales organization.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.

Interactive data sheet

How does it work?

The interactive data sheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive data sheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive data sheet