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Click here for more information650 V, 50 A trench field-stop IGBT with full rated silicon diode
The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses,. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
Device current is rated at 50 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature 175 °C
Fully rated and fast reverse recovery diode
HV-H3TRB qualified
Power inverters such as
Uninterruptible Power Supply (UPS) inverter
EV charging converter
Power Factor Correction (PFC)
Induction heating
Welding
| Type number | Product status | VCE [max] (V) | IC [typ] (A) | Configuration | Tj [min] (°C) | Tj [max] (°C) | Package version | Package name |
|---|---|---|---|---|---|---|---|---|
| NGW50T65H3DFP | Production | 650 | 50 | HS | -40 | 175 | SOT429-5 | TO-247-3 |
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| NGW50T65H3DFP | NGW50T65H3DFPQ (934668244127) |
Active | W50T65H3DFP |
TO-247-3 (SOT429-5) |
SOT429-5 | Not available | |
| NGW50T65H3DFP/A00Z (934671639347) |
Samples available / Development | W50T65H3DFP | Not available | ||||
| NGW50T65H3DFPZ (934668244347) |
Development | W50T65H3DFP | Not available |
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| NGW50T65H3DFP | NGW50T65H3DFPQ | NGW50T65H3DFP |
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| NGW50T65H3DFP | NGW50T65H3DFP/A00Z | NGW50T65H3DFP |
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| NGW50T65H3DFP | NGW50T65H3DFPZ | NGW50T65H3DFP |
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| File name | Title | Type | Date |
|---|---|---|---|
| NGW50T65H3DFP | 650 V, 50 A trench field-stop IGBT with full rated silicon diode | Data sheet | 2025-03-03 |
| AN90042 | Nexperia 650 V (G3) IGBT product introduction | Application note | 2025-08-06 |
| SOT429-2 | SOT429-2.step | Design support | 2024-11-22 |
| SOT429-5 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3 | Package information | 2025-11-03 |
| NGW50T65H3DFP_L1 | NGW50T65H3DFP SPICE model | SPICE model | 2024-12-06 |
| Nexperia_IGBT_650V_LTSpice_models | SPICE models for Nexperia IGBTs of 650 V | SPICE model | 2025-08-29 |
| Nexperia_IGBT_650V_PLECS_models | Thermal models for Nexperia IGBTs of 650 V | Thermal model | 2025-08-29 |
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The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
| File name | Title | Type | Date |
|---|---|---|---|
| SOT429-2 | SOT429-2.step | Design support | 2024-11-22 |
| NGW50T65H3DFP_L1 | NGW50T65H3DFP SPICE model | SPICE model | 2024-12-06 |
| Nexperia_IGBT_650V_LTSpice_models | SPICE models for Nexperia IGBTs of 650 V | SPICE model | 2025-08-29 |
| Nexperia_IGBT_650V_PLECS_models | Thermal models for Nexperia IGBTs of 650 V | Thermal model | 2025-08-29 |
| Type number | Orderable part number | Ordering code (12NC) | Status | Packing | Packing Quantity | Buy online |
|---|---|---|---|---|---|---|
| NGW50T65H3DFP | NGW50T65H3DFPQ | 934668244127 | Active | Not available | 450 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.