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NID5100GW

NID5100GW Production

1.2 V to 5.5 V, 1.5 A input polarity protected, low quiescent current ideal diode

The NID5100 is an integrated ideal diode capable of replacing traditional diodes in low voltage systems unable to tolerate the high voltage drops of conventional Schottky components.

When enabled and forward biased, the device regulates the voltage between the IN and OUT pins resulting in a forward voltage drop, VREG, approximately an order of magnitude smaller than similarly rated Schottky diodes. When OUT voltage is higher than IN voltage, the NID5100 becomes reverse biased with very low leakage current.

Integrated Reverse-Polarity Protection (RPP) prevents damage to components connected to the OUT pin in the event of a supply voltage reversal.

The enable pin, EN determines if NID5100 operates in forward regulation mode or body-diode mode.

A variety of power OR-ing configurations are supported for system flexibility:

  • Two, or more, NID5100 devices in combination

  • NID5100s and conventional Schottky diodes

  • An NID5100 and an external PMOS

An open-drain status pin, ST, is high-impedance when NID5100 is enabled and in forward conduction and low when disabled or in a reverse biased condition. The ST pin can be used to control an external PMOS to OR an additional supply, or connected to a microcontroller to indicate the status condition of NID5100.

The NID5100 is available in a standard TSSOP6 (SOT363-2) with 2.1 mm x 1.25 mm x 0.95 mm body package compatible with industry SC88/SC70-6 packages providing a small PCB footprint compared to conventional low-current diodes.
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  • Interactive datasheet

Product details

Features and benefits

  • Low loss replacement for power OR-ing diodes

  • Automatic transition between OR-ed supplies

  • Operating voltage range: 1.2 V to 5.5 V

  • Reverse voltage protection VIN: -6 V absolute maximum

  • Supports forward current up to 1.5 A

  • Forward regulation voltage, VREG : 31 mV (typ) at IOUT = 10 mA, VIN = 3.3 V

  • Active LOW control pin, EN

  • Output status indication, ST

  • Low current consumption:

    • 3.3 V shutdown current, IIN(SD): 170 nA (typ)

    • 3.3 V quiescent current, IIN(Q): 240 nA (typ)

  • Specified over Tamb -40 °C to +125 °C

Applications

  • Building automation

  • Smart meters

  • OR-ed primary and battery backup

Figure 1. Simplified application

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

Sample

As a Nexperia customer you can order samples via our sales organization.

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Interactive datasheet

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet