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Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)
NGD4300DD-Q100

NGD4300DD-Q100 Production

4 A peak high-performance dual MOSFET gate driver

The NGD4300-Q100 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300-Q100 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage.

Excellent delay matching of 1 ns typical is achieved for the low-side and high-side signal paths. The 4 A peak source and sink current capability of the driver’s output stage guarantees short rise- and fall-times even at high loads.

The NGD4300-Q100 is offered in the HSO8 package, and operates over an extended −40 °C to +125 °C temperature range.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
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Product details

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)
    • Specified from -40 °C to +125 °C
  • Input signals complying with both TTL and CMOS signaling of 2.5 V, 3.3 V, and 5 V
  • Output signals with 1 ns propagation delay matching (typical)
  • Propagation times of 13 ns (typical)
  • Switching frequency up to 1 MHz
  • 4 A peak source and 5 A sink current capability of the gate driver output stage
  • 4 ns rise and 3.5 ns fall times with 1000 pF loads
  • Bootstrap supply voltage up to 120 V using an integrated bootstrap diode
  • 8 V to 17 V VDD operation range
  • Undervoltage protection for both low-side and high-side supplies
  • Low-power consumption (IDDO) of 0.6 mA (typical)
  • 8 pin HSO8 package
  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

Applications

  • Current-fed, push-pull converters

  • Two-switch forward power converters

  • Class-D audio amplifiers

  • Solid-state motor drives

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More information

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

Sample

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Interactive datasheet

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet