74LVC1G11GV-Q100

Single 3-input AND gate

Automotive qualified

The 74LVC1G11-Q100 is a single 3-input AND gate. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device is fully specified for partial power down applications using I_OFF. The I_OFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

Single 3-input AND gate

Buy from Nexperia

SKU	Stock*	MOQ	Price per unit**	Quantity

Buy from distributors

Seller	SKU	Stock	MOQ		1	10	100	1,000	10,000	Purchase

Seller	SKU	Stock	MOQ		1	10	100	1,000	10,000	Purchase

Seller	SKU	Stock	MOQ		1	10	100	1,000	10,000	Purchase

Seller	SKU	Stock	MOQ		1	10	100	1,000	10,000	Purchase

Seller	SKU	Stock	MOQ		1	10	100	1,000	10,000	Purchase

* Stock values are subject to change
** Displayed price per unit is based on small quantity orders
*** Authorized resellers for overstock, mature, and discontinued products which are warranted for reliability by the reseller, no longer by Nexperia

Features and benefits

Automotive product qualification in accordance with AEC-Q100 (Grade 1)
- Specified from -40 °C to +85 °C and -40 °C to +125 °C
Wide supply voltage range from 1.65 V to 5.5 V
Overvoltage tolerant inputs to 5.5 V
High noise immunity
±24 mA output drive (V_CC = 3.0 V)
CMOS low power dissipation
Direct interface with TTL levels
±24 mA output drive (V_CC = 3.0 V)
I_OFF circuitry provides partial Power-down mode operation
Latch-up performance exceeds 250 mA
Complies with JEDEC standard:
- JESD8-7 (1.65 V to 1.95 V)
- JESD8-5 (2.3 V to 2.7 V)
- JESD8C (2.7 V to 3.6 V)
- JESD36 (4.5 V to 5.5 V)
ESD protection:
- MIL-STD-883, method 3015 exceeds 2000 V
- HBM JESD22-A114F exceeds 2000 V
- MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 Ω)

Parametrics

Type number	Product status	V_CC (V)	Logic switching levels	Output drive capability (mA)	t_pd (ns)	f_max (MHz)	Nr of bits	Power dissipation considerations	T_amb (°C)	R_th(j-a) (K/W)	Ψ_th(j-top) (K/W)	R_th(j-c) (K/W)	Package name
74LVC1G11GV-Q100	Production	1.65 - 5.5	CMOS/LVTTL	± 32	2.6	175	1	low	-40~125	261	63.0	172	TSOP6

Package

Type number	Orderable part number, (Ordering code (12NC))	Status	Marking	Package	Package information	Reflow-/Wave soldering	Packing
74LVC1G11GV-Q100	74LVC1G11GV-Q100H ( 9352 992 86125 )	Active	V11	TSOP6 (SOT457)	SOT457	REFLOW_BG-BD-1 WAVE_BG-BD-1	Reel 7" Q3/T4, Reverse

Environmental information

Type number	Orderable part number	Chemical content	RoHS	RHF-indicator
74LVC1G11GV-Q100	74LVC1G11GV-Q100H	74LVC1G11GV-Q100

Quality and reliability disclaimer

Series

74LVC1G11-Q100 - Single 3-input AND gate

Documentation (7)

File name	Title	Type	Date
74LVC1G11_Q100	Single 3-input AND gate	Data sheet	2022-02-04
AN10161	PicoGate Logic footprints	Application note	2002-10-29
AN11009	Pin FMEA for LVC family	Application note	2019-01-09
lvc1g11	74LVC1G11 IBIS model	IBIS model	2015-09-06
74LVC1G11GV-Q100_Nexperia_Product_Reliability	74LVC1G11GV-Q100 Nexperia Product Reliability	Quality document	2023-05-29
REFLOW_BG-BD-1	Reflow soldering profile	Reflow soldering	2021-04-06
WAVE_BG-BD-1	Wave soldering profile	Wave soldering	2021-09-08

Support

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Models

File name	Title	Type	Date
lvc1g11	74LVC1G11 IBIS model	IBIS model	2015-09-06

Ordering, pricing & availability

Type number	Orderable part number	Ordering code (12NC)	Packing	Packing quantity	Buy online
74LVC1G11GV-Q100	74LVC1G11GV-Q100H	935299286125	Reel 7" Q3/T4, Reverse	-	Order product

Sample

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Sample orders normally take 2-4 days for delivery.

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet