30 V, 1 A NPN/NPN low VCEsat (BISS) transistor
Buy from Nexperia
| SKU | Stock* | MOQ | Price per unit** | Quantity |
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Buy from distributors
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
** Displayed price per unit is based on small quantity orders
*** Authorized resellers for overstock, mature, and discontinued products which are warranted for reliability by the reseller, no longer by Nexperia
Features and benefits
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Very low collector-emitter saturation voltage VCEsat
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High collector current capability IC and ICM
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High collector current gain hFE at high IC
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Reduced Printed-Circuit Board (PCB) requirements
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High energy efficiency due to less heat generation
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AEC-Q101 qualified
Applications
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Load switch
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Battery-driven devices
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Power management
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Charging circuits
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Power switches (e.g. motors, fans)
Parametrics
| Type number | Package version | Package name | Size (mm) | Product status | Polarity | Nr of transistors | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | VCEsat [max] (NPN) (mV) | RCEsat@IC [max]; IC/IB =10 [typ] (mΩ) | hFE [min] | fT [typ] (MHz) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS4130PAN | SOT1118 | DFN2020-6 | 2 x 2 x 0.65 | Production | NPN | 2 | 1040 | 30 | 1 | 190 | 190 | 240 | 165 |
PCB Symbol, Footprint and 3D Model
| Model Name | Description |
|---|---|
Package
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| PBSS4130PAN | PBSS4130PAN,115 ( 9340 668 79115 ) | Active | 2D |  DFN2020-6 (SOT1118) | SOT1118 | REFLOW_BG-BD-1 | SOT1118_115 |
Environmental information
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| PBSS4130PAN | PBSS4130PAN,115 | PBSS4130PAN |  |   |
Series
Documentation (6)
| File name | Title | Type | Date |
|---|---|---|---|
| PBSS4130PAN | 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor | Data sheet | 2017-05-22 |
| PBSS4130PAN_Nexperia_Product_Quality | PBSS4130PAN Nexperia Product Quality | Quality document | 2019-05-20 |
| PBSS4130PAN_Nexperia_Product_Reliability | PBSS4130PAN Nexperia Product Reliability | Quality document | 2023-04-04 |
| PBSS4130PAN | PBSS4130PAN SPICE model | SPICE model | 2023-09-05 |
| SOT1118_115 | DFN2020-6; Reel pack for SMD, 7''; Q2/T3 product orientation | Packing information | 2020-06-12 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
Support
If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.
Models
| File name | Title | Type | Date |
|---|---|---|---|
| PBSS4130PAN | PBSS4130PAN SPICE model | SPICE model | 2023-09-05 |
PCB Symbol, Footprint and 3D Model
| Model Name | Description |
|---|---|
Ordering, pricing & availability
| Type number | Orderable part number | Ordering code (12NC) | Packing | Packing quantity | Buy online |
|---|---|---|---|---|---|
| PBSS4130PAN | PBSS4130PAN,115 | 934066879115 | SOT1118_115 | - | Order product |
Sample
As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.
Sample orders normally take 2-4 days for delivery.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.