80 V, 100 mA PNP resistor-equipped transistors
Buy from Nexperia
| SKU | Stock* | MOQ | Price per unit** | Quantity |
|---|
Buy from distributors
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
** Displayed price per unit is based on small quantity orders
*** Authorized resellers for overstock, mature, and discontinued products which are warranted for reliability by the reseller, no longer by Nexperia
Features and benefits
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100 mA output current capability
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High breakdown voltage
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Built-in resistors
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Simplifies circuit design
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Reduces component count
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Reduces pick and place costs
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AEC-Q101 qualified
Applications
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Digital applications
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Cost saving alternative for BC856 series in digital applications
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Controlling IC inputs
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Switching loads
Parametrics
| Type number | Package version | Package name | Size (mm) | IO [max] (mA) | R1 (typ) (kΩ) | R2 (typ) (kΩ) | Channel type | Ptot (mW) | VCEO (V) |
|---|---|---|---|---|---|---|---|---|---|
| NHDTA123JT | SOT23 | SOT23 | 2.9 x 1.3 x 1 | 100 | 2.2 | 47 | PNP | 250 | 80 |
PCB Symbol, Footprint and 3D Model
| Model Name | Description |
|---|---|
Package
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| NHDTA123JT | NHDTA123JTVL ( 9346 613 62235 ) | Active | QC% |  (SOT23) | SOT23 | REFLOW_BG-BD-1 WAVE_BG-BD-1 | SOT23_235 |
| NHDTA123JTR ( 9346 613 62215 ) | Active | QC% | SOT23_215 |
Environmental information
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| NHDTA123JT | NHDTA123JTVL | NHDTA123JT |  |   |
| NHDTA123JT | NHDTA123JTR | NHDTA123JT | | |
Documentation (9)
| File name | Title | Type | Date |
|---|---|---|---|
| NHDTA123JT_143ZT_114YT_SER | 80 V, 100 mA PNP resistor-equipped transistors | Data sheet | 2020-07-07 |
| AN90024 | Resistor Equipped Transistors (RETs): Key parameters and application insights | Application note | 2021-03-03 |
| NHDTA123JT_Nexperia_Product_Reliability | NHDTA123JT Nexperia Product Reliability | Quality document | 2023-04-04 |
| NHDTA123JT | NHDTA123JT SPICE model | SPICE model | 2023-11-17 |
| NHDTA123JT_cauer | NHDTA123JT RC thermal cauer model | Thermal design | 2020-06-22 |
| SOT23_235 | Reel pack for SMD, 11"; Q3/T4 product orientation | Packing information | 2020-06-01 |
| SOT23_215 | Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2020-04-29 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Support
If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.
Models
| File name | Title | Type | Date |
|---|---|---|---|
| NHDTA123JT | NHDTA123JT SPICE model | SPICE model | 2023-11-17 |
| NHDTA123JT_cauer | NHDTA123JT RC thermal cauer model | Thermal design | 2020-06-22 |
PCB Symbol, Footprint and 3D Model
| Model Name | Description |
|---|---|
Sample
As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.
Sample orders normally take 2-4 days for delivery.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.