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Click here for more informationNPN/PNP double Resistor-Equipped Transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
| Type number | Package version | Package name | Size (mm) | IC [max] (mA) | R1 (typ) (kΩ) | R2 (typ) (kΩ) | Channel type | Ptot (mW) | VCEO (V) | Tj [max] (°C) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|---|
| PUMD10 | SOT363 | TSSOP6 | 2.1 x 1.25 x 0.95 | 100 | 2.2 | 47 | NPN/PNP | 300 | 50 | 150 | N |
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| PUMD10 | PUMD10,115 (934055239115) |
Active | D%0 |
TSSOP6 (SOT363) |
SOT363 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT363_115 |
| PUMD10,125 (934055239125) |
Active | D%0 | SOT363_125 | ||||
| PUMD10,135 (934055239135) |
Active | D%0 | SOT363_135 |
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| PUMD10 | PUMD10,115 | PUMD10 |
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| PUMD10 | PUMD10,125 | PUMD10 |
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| PUMD10 | PUMD10,135 | PUMD10 |
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| File name | Title | Type | Date |
|---|---|---|---|
| PUMD10 | 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ | Data sheet | 2022-10-01 |
| AN90032 | Low temperature soldering, application study | Application note | 2022-02-22 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
| SOT363 | 3D model for products with SOT363 package | Design support | 2018-12-05 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| TSSOP6_SOT363_mk | plastic, surface-mounted package; 6 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body | Marcom graphics | 2017-01-28 |
| LSYMTRA | Letter Symbols - Transistors; General | Other type | 1999-05-06 |
| SOT363 | plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body | Package information | 2022-06-01 |
| SOT363_115 | TSSOP6; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-06-12 |
| SOT363_125 | TSSOP6 ; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2020-04-21 |
| SOT363_135 | TSSOP6; Tape reel SMD; standard product orientation 12NC ending 135 | Packing information | 2020-04-27 |
| PUMD10_Nexperia_Product_Reliability | PUMD10 Nexperia Product Reliability | Quality document | 2025-05-14 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PUMD10 | PUMD10 SPICE model | SPICE model | 2024-08-27 |
| MAR_SOT363 | MAR_SOT363 Topmark | Top marking | 2013-06-03 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
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The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
| Type number | Orderable part number | Ordering code (12NC) | Status | Packing | Packing Quantity | Buy online |
|---|---|---|---|---|---|---|
| PUMD10 | PUMD10,115 | 934055239115 | Active | SOT363_115 | 3,000 |
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| PUMD10 | PUMD10,125 | 934055239125 | Active | SOT363_125 | 3,000 |
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| PUMD10 | PUMD10,135 | 934055239135 | Active | SOT363_135 | 10,000 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
