50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 47 kΩ
Buy from Nexperia
| SKU | Stock* | MOQ | Price per unit** | Quantity |
|---|
Buy from distributors
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
** Displayed price per unit is based on small quantity orders
*** Authorized resellers for overstock, mature, and discontinued products which are warranted for reliability by the reseller, no longer by Nexperia
Features and benefits
-
100 mA output current capability
-
Built-in bias resistors
-
Simplified circuit design
-
Reduces component count
-
Reduces pick and place costs
-
AEC-Q101 qualified
Applications
-
Low current peripheral driver
-
Controlling IC inputs
-
Replacement of general purpose transistors in digital applications
Parametrics
| Type number | Package version | Package name | Size (mm) | IO [max] (mA) | R1 (typ) (kΩ) | R2 (typ) (kΩ) | Channel type | Ptot (mW) | VCEO (V) | Tj [max] (°C) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|---|
| PUMD16 | SOT363 | TSSOP6 | 2.1 x 1.25 x 0.95 | 100 | 22 | 47 | NPN/PNP | 300 | 50 | 150 | N |
PCB Symbol, Footprint and 3D Model
| Model Name | Description |
|---|---|
Package
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| PUMD16 | PUMD16,115 ( 9340 578 92115 ) | Active | D1% |  TSSOP6 (SOT363) | SOT363 | REFLOW_BG-BD-1 WAVE_BG-BD-1 | SOT363_115 |
Environmental information
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| PUMD16 | PUMD16,115 | PUMD16 |  |   |
Documentation (8)
| File name | Title | Type | Date |
|---|---|---|---|
| PUMD16 | 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 47 kΩ | Data sheet | 2023-03-31 |
| LSYMTRA | Letter Symbols - Transistors; General | Other type | 1999-05-06 |
| PUMD16_Nexperia_Product_Quality | PUMD16 Nexperia Product Quality | Quality document | 2019-05-20 |
| PUMD16_Nexperia_Product_Reliability | PUMD16 Nexperia Product Reliability | Quality document | 2023-04-04 |
| PUMD16 | PUMD16 SPICE model | SPICE model | 2023-11-17 |
| SOT363_115 | TSSOP6; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-06-12 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Support
If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.
Models
| File name | Title | Type | Date |
|---|---|---|---|
| PUMD16 | PUMD16 SPICE model | SPICE model | 2023-11-17 |
PCB Symbol, Footprint and 3D Model
| Model Name | Description |
|---|---|
Ordering, pricing & availability
| Type number | Orderable part number | Ordering code (12NC) | Packing | Packing quantity | Buy online |
|---|---|---|---|---|---|
| PUMD16 | PUMD16,115 | 934057892115 | SOT363_115 | - | Order product |
Sample
As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.
Sample orders normally take 2-4 days for delivery.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.