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GaN FETs

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Automotive qualified products (AEC-Q100/Q101)

80 - 200 V high-power GaN devices

High-power efficiency for next-gen power systems

Nexperia’s high-power medium-voltage (80 V to 200 V) GaN platform is engineered for the demanding, high-power applications driving the future of power conversion. Combining ultra-low RDS(on), low QG and QOSS, and high-frequency switching, these devices deliver exceptional efficiency, power density and dynamic performance. Available in advanced QFN packages with top- and bottom-side cooling, they support high current levels with excellent thermal performance. Ideal for AI datacenters, industrial systems, robotics, energy and motor drives, they enable lower losses, faster response and more compact, scalable power designs for next-generation high-power systems.

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 80 - 200 V GaN power devices
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Products

Type number Description Status Quick access
GANE0R8-100QTM 100 V, 0.75 mOhm Gallium Nitride (GaN) FET in a QFN 3 mm x 5 mm TSC package Development
GANE1R2-100QTM 100 V, 1.2 mOhm Gallium Nitride (GaN) FET in a QFN 3.3 mm x 3.3 mm TSC package Development
GANE3R5-200QTM 200 V, 3.5 mOhm Gallium Nitride (GaN) FET in a QFN 3 mm x 5 mm TSC package Development
GANE7R2-200QTM 200 V, 7.2 mOhm Gallium Nitride (GaN) FET in a QFN 3 mm x 5 mm TSC package Development
Visit our documentation center for all documentation

Application note (2)

File name Title Type Date
AN90005.pdf Understanding Power GaN FET data sheet parameters Application note 2026-10-01
AN90004.pdf Probing considerations for fast switching applications Application note 2026-10-01

Leaflet (1)

File name Title Type Date
nexperia_document_leaflet_GaNFETs_2026.pdf Power GaN FETs Leaflet 2026-10-01

User manual (1)

File name Title Type Date
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020.pdf MOSFET & GaN FET Application Handbook User manual 2026-10-01

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Cross reference