Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC power devices

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

80 - 200 V high-power GaN devices

High-power efficiency for next-gen power systems

Nexperia’s high-power medium-voltage (80 V to 200 V) GaN platform is engineered for the demanding, high-power applications driving the future of power conversion. Combining ultra-low RDS(on), low QG and QOSS, and high-frequency switching, these devices deliver exceptional efficiency, power density and dynamic performance. Available in advanced QFN packages with top- and bottom-side cooling, they support high current levels with excellent thermal performance. Ideal for AI datacenters, industrial systems, robotics, energy and motor drives, they enable lower losses, faster response and more compact, scalable power designs for next-generation high-power systems.

Products

Type number Description Status Quick access
GANE1R8-100QBA 100 V, 1.8 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) Production
GANE3R9-150QBA 150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) Production

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Cross reference