Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC power devices

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

80 - 200 V low-power GaN devices

High efficiency in the smallest footprint

Nexperia’s low-power 80–200 V GaN platform brings the benefits of wide-bandgap technology to compact systems where efficiency, size and system cost are critical. Combining ultra-low RDS(on), low QG and QOSS, and clean, fast switching in compact CSP packages, these devices enable higher switching frequencies, reduced magnetics and increased power density. Ideal for power supplies, audio amplifiers, LiDAR and low-power motor drives, they deliver lower losses, simpler thermal management and significant size reduction. Delivering the efficiency, compactness and integration flexibility increasingly required by today's electronic systems.

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80 - 200 V GaN for low-power applications
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Visit our documentation center for all documentation

Application note (2)

File name Title Type Date
AN90005.pdf Understanding Power GaN FET data sheet parameters Application note 2026-10-01
AN90004.pdf Probing considerations for fast switching applications Application note 2026-10-01

Leaflet (1)

File name Title Type Date
nexperia_document_leaflet_GaNFETs_2026.pdf Power GaN FETs Leaflet 2026-10-01

User manual (1)

File name Title Type Date
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020.pdf MOSFET & GaN FET Application Handbook User manual 2026-10-01

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Cross reference